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W29C040P90BN PDF预览

W29C040P90BN

更新时间: 2024-11-07 23:41:31
品牌 Logo 应用领域
其他 - ETC 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
24页 337K
描述
EEPROM|FLASH|512KX8|CMOS|LDCC|32PIN|PLASTIC

W29C040P90BN 数据手册

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W29C040  
´ 8 CMOS FLASH MEMORY  
512K  
GENERAL DESCRIPTION  
The W29C040 is a 4-megabit, 5-volt only CMOS page mode Flash Memory organized as 512K ´ 8  
bits. The device can be written (erased and programmed) in-system with a standard 5V power supply.  
A 12-volt VPP is not required. The unique cell architecture of the W29C040 results in fast write (erase/  
program) operations with extremely low current consumption (compared to other comparable 5-volt  
flash memory products.) The device can also be erased and programmed by using standard EPROM  
programmers.  
FEATURES  
· Single 5-volt write (erase and program)  
operations  
· Software and hardware data protection  
· Low power consumption  
· Fast page-write operations  
- 256 bytes per page  
- Active current: 25 mA (typ.)  
- Standby current: 20 mA (typ.)  
- Page write (erase/program) cycle: 5 mS  
(typ.)  
·
Automatic write (erase/program) timing with  
internal VPP generation  
- Effective byte-write (erase/program) cycle  
time: 19.5 mS  
· End of write (erase/program) detection  
- Toggle bit  
- Optional software-protected data write  
· Fast chip-erase operation: 50 mS  
· Two 16 KB boot blocks with lockout  
· Page write (erase/program) cycles: 50K (typ.)  
· Read access time: 70/90/120 nS  
· Ten-year data retention  
- Data polling  
· Latched address and data  
· All inputs and outputs directly TTL compatible  
· JEDEC standard byte-wide pinouts  
· Available packages: 32-pin 600 mil DIP, TSOP  
and PLCC  
Publication Release Date: May 6, 2002  
- 1 -  
Revision A9  

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