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W29C040T70BN PDF预览

W29C040T70BN

更新时间: 2024-11-08 21:15:43
品牌 Logo 应用领域
华邦 - WINBOND 光电二极管内存集成电路
页数 文件大小 规格书
24页 329K
描述
Flash, 512KX8, 70ns, PDSO32, TSOP1-32

W29C040T70BN 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP1包装说明:TSOP1-32
针数:32Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.91Is Samacsys:N
最长访问时间:70 ns启动块:BOTTOM/TOP
命令用户界面:NO数据轮询:YES
耐久性:10000 Write/Erase CyclesJESD-30 代码:R-PDSO-G32
JESD-609代码:e0长度:18.4 mm
内存密度:4194304 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
部门数/规模:2K端子数量:32
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:512KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP32,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH页面大小:256 words
并行/串行:PARALLEL峰值回流温度(摄氏度):240
电源:5 V编程电压:5 V
认证状态:Not Qualified座面最大高度:1.2 mm
部门规模:256最大待机电流:0.0001 A
子类别:Flash Memories最大压摆率:0.05 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30切换位:YES
类型:NOR TYPE宽度:8 mm
最长写入周期时间 (tWC):10 msBase Number Matches:1

W29C040T70BN 数据手册

 浏览型号W29C040T70BN的Datasheet PDF文件第2页浏览型号W29C040T70BN的Datasheet PDF文件第3页浏览型号W29C040T70BN的Datasheet PDF文件第4页浏览型号W29C040T70BN的Datasheet PDF文件第5页浏览型号W29C040T70BN的Datasheet PDF文件第6页浏览型号W29C040T70BN的Datasheet PDF文件第7页 
W29C040  
´ 8 CMOS FLASH MEMORY  
512K  
GENERAL DESCRIPTION  
The W29C040 is a 4-megabit, 5-volt only CMOS page mode Flash Memory organized as 512K ´ 8  
bits. The device can be written (erased and programmed) in-system with a standard 5V power supply.  
A 12-volt VPP is not required. The unique cell architecture of the W29C040 results in fast write (erase/  
program) operations with extremely low current consumption (compared to other comparable 5-volt  
flash memory products.) The device can also be erased and programmed by using standard EPROM  
programmers.  
FEATURES  
· Single 5-volt write (erase and program)  
operations  
· Software and hardware data protection  
· Low power consumption  
· Fast page-write operations  
- 256 bytes per page  
- Active current: 25 mA (typ.)  
- Standby current: 20 mA (typ.)  
- Page write (erase/program) cycle: 5 mS  
(typ.)  
·
Automatic write (erase/program) timing with  
internal VPP generation  
- Effective byte-write (erase/program) cycle  
time: 19.5 mS  
· End of write (erase/program) detection  
- Toggle bit  
- Optional software-protected data write  
· Fast chip-erase operation: 50 mS  
· Two 16 KB boot blocks with lockout  
· Page write (erase/program) cycles: 50K (typ.)  
· Read access time: 70/90/120 nS  
· Ten-year data retention  
- Data polling  
· Latched address and data  
· All inputs and outputs directly TTL compatible  
· JEDEC standard byte-wide pinouts  
· Available packages: 32-pin 600 mil DIP, TSOP  
and PLCC  
Publication Release Date: May 6, 2002  
- 1 -  
Revision A9  

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