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W29C040S-12C PDF预览

W29C040S-12C

更新时间: 2024-09-21 04:19:23
品牌 Logo 应用领域
华邦 - WINBOND 光电二极管
页数 文件大小 规格书
22页 134K
描述
Flash, 512KX8, 120ns, PDSO32, 0.450 INCH, SOP-32

W29C040S-12C 数据手册

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Preliminary W29C040  
´ 8 CMOS FLASH MEMORY  
512K  
GENERAL DESCRIPTION  
The W29C040 is a 4-megabit, 5-volt only CMOS page mode EEPROM organized as 512K ´ 8 bits.  
The device can be written (erased and programmed) in-system with a standard 5V power supply. A  
12-volt VPP is not required. The unique cell architecture of the W29C040 results in fast write (erase/  
program) operations with extremely low current consumption compared to other comparable 5-volt  
flash memory products. The device can also be written (erased and programmed) by using standard  
EPROM programmers.  
FEATURES  
· Single 5-volt write (erase and program)  
· Low power consumption  
operations  
- Active current: 25 mA (typ.)  
- Standby current: 20 mA (typ.)  
· Fast page-write operations  
- 256 bytes per page  
· Automatic write (erase/program) timing with  
- Page write (erase/program) cycle: 5 mS  
internal VPP generation  
(typ.)  
· End of write (erase/program) detection  
- Toggle bit  
- Effective byte-write (erase/program) cycle  
time: 19.5 mS  
- Data polling  
- Optional software-protected data write  
· Fast chip-erase operation: 50 mS  
· Two 16 KB boot blocks with lockout  
· Latched address and data  
· All inputs and outputs directly TTL compatible  
· JEDEC standard byte-wide pinouts  
· Typical Page write (erase/program) cycles:  
1K/10K/100K (typ.)  
· Available packages: 32-pin 600 mil DIP, 450  
mil  
· Read access time: 90/120/150 nS  
· Ten-year data retention  
SOP, TSOP, and PLCC  
· Software and hardware data protection  
Publication Release Date: April 1997  
- 1 -  
Revision A1  

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