Datasheet > W27E512P-45

W27E512P-45

更新时间： 2024-11-21 22:41:27

品牌	Logo	应用领域
华邦 - WINBOND		可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
16页	191K
描述
64K X 8 ELECTRICALLY ERASABLE EPROM

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中文翻译

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数据手册

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W27E512P-45 数据手册

W27E512

64K ´ 8 ELECTRICALLY ERASABLE EPROM

GENERAL DESCRIPTION

The W27E512 is a high speed, low power Electrically Erasable and Programmable Read Only

Memory organized as 65536 8 bits that operates on a single 5 volt power supply. The W27E512

provides an electrical chip erase function.

FEATURES

· High speed access time:

45/55/70/90/120/150 nS (max.)

· +14V erase/+12V programming voltage

· Fully static operation

· Read operating current: 30 mA (max.)

· All inputs and outputs directly TTL/CMOS

· Erase/Programming operating current

compatible

30 mA (max.)

· Three-state outputs

· Standby current: 1 mA (max.)

· Single 5V power supply

· Available packages: 28-pin 600 mil DIP, 330 mil

SOP, TSOP and 32-pin PLCC

PIN CONFIGURATIONS

BLOCK DIAGRAM

A15

A12

A14

A13

OUTPUT

BUFFER

CONTROL

OE/V

A11

28-pin

DIP

OE/Vpp

A10

CORE

GND

DECODER

ARRAY

A15

GND

A11

32-pin

PLCC

OE/Vpp

A10

PIN DESCRIPTION

SYMBOL

DESCRIPTION

Address Inputs

A0 A15

Data Inputs/Outputs

Chip Enable

Q0 Q7

A10

OE/Vpp

A11

GND

A13

A14

Output Enable, Program/Erase

Supply Voltage

28-pin

TSOP

A15

A12

Power Supply

Ground

GND

No Connection

Publication Release Date: June 2000

Revision A9

- 1 -

12 3 4 5 6 7...16

中文翻译

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