型号 | 品牌 | 获取价格 | 描述 | 数据表 |
VT1000 | EDI |
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HIGH VOLTAGE 50 mA SILICON RECTIFIERS | |
VT10200C | VISHAY |
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Trench MOS Barrier Schottky Rectifier | |
VT10200C-E3/4W | VISHAY |
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DIODE 5 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R | |
VT10200C-E3-4W | VISHAY |
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Trench MOS Barrier Schottky Rectifier | |
VT10200C-M3 | VISHAY |
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Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A | |
VT10200C-M3/4W | VISHAY |
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Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 200V V(RRM), Silicon, TO-220AB, HALOGEN | |
VT10202C, VFT10202C, VBT10202C, VIT10202C | VISHAY |
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Dual High Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.58 V at I | |
VT10202C-M3/4W | VISHAY |
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Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 200V V(RRM), Silicon, TO-220AB, | |
VT10219000J0G | AMPHENOL |
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Barrier Strip Terminal Block | |
VT1045BP | VISHAY |
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Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection |