Datasheet > VT1045C-M3

VT1045C-M3

更新时间： 2024-11-16 01:15:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	135K
描述
Low forward voltage drop, low power losses

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中文翻译

获取价格

数据手册

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VT1045C-M3 数据手册

VT1045C-M3, VIT1045C-M3, VT1045CHM3, VIT1045CHM3

www.vishay.com

Vishay General Semiconductor

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.34 V at I_F= 2.5 A

FEATURES

TMBS^®

• Trench MOS Schottky technology

TO-220AB

TO-262AA

• Low forward voltage drop, low power losses

• High efficiency operation

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• AEC-Q101 qualified

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

VT1045C

VIT1045C

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection.

PIN 1

PIN 3

PIN 2

CASE

PIN 3

MECHANICAL DATA

Case: TO-220AB and TO-262AA

Molding compound meets UL 94 V-0 flammability rating

PRIMARY CHARACTERISTICS

Base P/N-M3

commercial grade

Base P/NHM3

AEC-Q101 qualified

halogen-free, RoHS-compliant, and

I_F(AV)

2 x 5.0 A

45 V

V_RRM

halogen-free, RoHS-compliant, and

I_FSM

100 A

V_Fat I_F= 5.0 A

T_Jmax.

0.41 V

150 °C

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix

meets JESD 201 class 2 whisker test

Package

TO-220AB, TO-262AA

Common cathode

Diode variations

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VT1045C

VIT1045C

UNIT

Maximum repetitive peak reverse voltage

V_RRM

per device

per diode

Maximum average forward rectified current (fig. 1)

I_F(AV)

5.0

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

100

Operating junction and storage temperature range

T_J, T_STG

-40 to +150

°C

Revision: 12-May-16

Document Number: 89348

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与VT1045C-M3相关器件

型号	品牌	获取价格	描述	数据表
VT1045C-M3/4W	VISHAY	获取价格	DIODE 5 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLAS
VT1045C-M3-4W	VISHAY	获取价格	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
VT1050升压IC	ETC	获取价格	VT1050系列芯片是采用CMOS工艺制造的静态电流极低的VFM开关型DC/DC升压转换器
VT1060C	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VT1060C_12	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VT1060C-E3/4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VT1060CHM3	VISHAY	获取价格	Trench MOS Schottky technology
VT1060CHM3/4W	VISHAY	获取价格	DIODE 5 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLAS
VT1060CHM3-4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VT1060C-M3	VISHAY	获取价格	Trench MOS Schottky technology

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