Datasheet > VT1080C_12

VT1080C_12

更新时间： 2024-11-15 08:17:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	148K
描述
Dual Trench MOS Barrier Schottky Rectifier

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VT1080C_12 数据手册

New Product

VT1080C, VFT1080C, VBT1080C, VIT1080C

Vishay General Semiconductor

Dual Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.49 V at I_F= 3 A

FEATURES

• Trench MOS Schottky technology

TMBS^®

TO-220AB

ITO-220AB

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

• Solder bath temperature 275 °C maximum, 10 s, per

JESD 22-B106 (for TO-220AB, ITO-220AB, and

TO-262AA package)

VT1080C

VFT1080C

TO-262AA

• Compliant to RoHS directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

PIN 1

PIN 3

PIN 1

PIN 3

PIN 2

CASE

TO-263AB

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, dc-to-dc

converters and reverse battery protection.

MECHANICAL DATA

VBT1080C

VIT1080C

Case:

TO-262AA

TO-220AB,

ITO-220AB,

TO-263AB

and

PIN 1

PIN 2

PIN 1

PIN 3

PIN 2

HEATSINK

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

PRIMARY CHARACTERISTICS

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

I_F(AV)

2 x 5 A

V_RRM

80 V

80 A

E3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked

I_FSM

Mounting Torque: 10 in-lbs maximum

V_Fat I_F= 5 A

T_Jmax.

0.57 V

150 °C

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL VT1080C VFT1080C VBT1080C VIT1080C UNIT

Maximum repetitive peak reverse voltage

V_RRM

per device

per diode

Maximum average forward rectified current (fig. 1)

I_F(AV)

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load per diode

I_FSM

E_AS

Non-repetitive avalanche energy at T_J= 25 °C, L = 60 mH per diode

Peak repetitive reverse current at t_p= 2 µs, 1 kHz,

T_J= 38 °C 2 °C per diode

I_RRM

1.0

Voltage rate of change (rated V_R)

dV/dt

V_AC

10 000

1500

V/µs

Isolation voltage (ITO-220AB only)

from terminal to heatsink t = 1 min

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 150

°C

Document Number: 89164

Revision: 08-Sep-09

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

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与VT1080C_12相关器件

型号	品牌	获取价格	描述	数据表
VT1080C-E3/4W	VISHAY	获取价格	Dual Trench MOS Barrier Schottky Rectifier
VT1080CHM3/4W	VISHAY	获取价格	DIODE 5 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLAS
VT1080CHM3-4W	VISHAY	获取价格	Dual Trench MOS Barrier Schottky Rectifier
VT1080C-M3/4W	VISHAY	获取价格	DIODE 5 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLAS
VT1080C-M3-4W	VISHAY	获取价格	Dual Trench MOS Barrier Schottky Rectifier
VT1080S	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier
VT1080S_12	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier
VT1080S-E3/4W	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier
VT1080SHM3/4W	VISHAY	获取价格	DIODE 10 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLA
VT1080SHM3-4W	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier

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