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VT1080S

更新时间： 2024-11-15 07:16:51
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威世 - VISHAY /
页数 文件大小 规格书
5页 148K
描述
Trench MOS Barrier Schottky Rectifier

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VT1080S 数据手册

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New Product  
VT1080S, VFT1080S, VBT1080S, VIT1080S  
Vishay General Semiconductor  
Trench MOS Barrier Schottky Rectifier  
Ultra Low VF = 0.52 V at IF = 5 A  
FEATURES  
• Trench MOS Schottky technology  
TMBS®  
TO-220AB  
ITO-220AB  
• Low forward voltage drop, low power losses  
• High efficiency operation  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 245 °C (for TO-263AB package)  
• Solder bath temperature 275 °C maximum, 10 s, per  
JESD 22-B106 (for TO-220AB, ITO-220AB, and  
TO-262AA package)  
3
3
2
2
1
1
VT1080S  
VFT1080S  
TO-262AA  
• Compliant to RoHS directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
PIN 1  
PIN 3  
PIN 1  
PIN 3  
PIN 2  
CASE  
PIN 2  
TO-263AB  
TYPICAL APPLICATIONS  
K
K
For use in high frequency converters, switching power  
supplies, freewheeling diodes, OR-ing diode, dc-to-dc  
converters and reverse battery protection.  
A
3
NC  
VBT1080S  
2
1
MECHANICAL DATA  
VIT1080S  
Case:  
TO-262AA  
TO-220AB,  
ITO-220AB,  
TO-263AB  
and  
NC  
A
K
PIN 1  
PIN 3  
PIN 2  
K
HEATSINK  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS compliant, commercial grade  
PRIMARY CHARACTERISTICS  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
IF(AV)  
VRRM  
IFSM  
10 A  
80 V  
100 A  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
VF at IF = 10 A  
TJ max.  
0.60 V  
150 °C  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL VT1080S VFT1080S VBT1080S VIT1080S UNIT  
Maximum repetitive peak reverse voltage  
Maximum average forward rectified current (fig. 1)  
VRRM  
IF(AV)  
80  
10  
V
A
Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load  
IFSM  
EAS  
100  
110  
1.0  
A
mJ  
A
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH  
Peak repetitive reverse current at tp = 2 µs, 1 kHz,  
TJ = 38 °C 2 °C  
IRRM  
Isolation voltage (ITO-220AB only)  
from terminal to heatsink t = 1 min  
VAC  
1500  
V
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
°C  
Document Number: 89165  
Revision: 08-Sep-09  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
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