Datasheet > VT1060C-M3

VT1060C-M3

更新时间： 2024-10-15 01:15:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	133K
描述
Trench MOS Schottky technology

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中文翻译

获取价格

数据手册

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VT1060C-M3 数据手册

VT1060C-M3, VIT1060C-M3, VT1060CHM3, VIT1060CHM3

www.vishay.com

Vishay General Semiconductor

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.39 V at I_F= 2.5 A

FEATURES

TMBS^®

• Trench MOS Schottky technology

TO-220AB

TO-262AA

• Low forward voltage drop, low power losses

• High efficiency operation

• Solder bath temperature 275 °C max. 10 s, per

JESD 22-B106

• AEC-Q101 qualified

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

VT1060C

VIT1060C

TYPCIAL APPLICATIONS

PIN 1

PIN 2

CASE

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection.

PIN 3

MECHANICAL DATA

PRIMARY CHARACTERISTICS

Case: TO-220AB and TO-262AA

Molding compound meets UL 94 V-0 flammability rating

I_F(AV)

2 x 5.0 A

60 V

Base P/N-M3

commercial grade

Base P/NHM3

AEC-Q101 qualified

halogen-free, RoHS-compliant, and

V_RRM

I_FSM

100 A

halogen-free, RoHS-compliant, and

V_Fat I_F= 5.0 A

T_Jmax.

0.50 V

150 °C

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix

Package

TO-220AB, TO-262AA

Dual common cathode

Diode variation

meets JESD 201 class 2 whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VT1060C

VIT1060C

UNIT

Maximum repetitive peak reverse voltage

V_RRM

per device

per diode

Maximum average forward rectified current

(fig. 1)

I_F(AV)

I_FSM

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

100

Voltage rate of change (rated V_R)

dV/dt

10 000

V/μs

°C

Operating junction and storage temperature range

T_J, T_STG

-55 to +150

Revision: 15-Dec-16

Document Number: 89232

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与VT1060C-M3相关器件

型号	品牌	获取价格	描述	数据表
VT1060C-M3/4W	VISHAY	获取价格	DIODE 5 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLAS
VT1060C-M3-4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VT1080C	VISHAY	获取价格	Dual Trench MOS Barrier Schottky Rectifier
VT1080C_12	VISHAY	获取价格	Dual Trench MOS Barrier Schottky Rectifier
VT1080C-E3/4W	VISHAY	获取价格	Dual Trench MOS Barrier Schottky Rectifier
VT1080CHM3/4W	VISHAY	获取价格	DIODE 5 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLAS
VT1080CHM3-4W	VISHAY	获取价格	Dual Trench MOS Barrier Schottky Rectifier
VT1080C-M3/4W	VISHAY	获取价格	DIODE 5 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLAS
VT1080C-M3-4W	VISHAY	获取价格	Dual Trench MOS Barrier Schottky Rectifier
VT1080S	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier

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