Datasheet > VT1045C

VT1045C

更新时间： 2024-11-14 08:17:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	124K
描述
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

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VT1045C 数据手册

New Product

VT1045C, VIT1045C

Vishay General Semiconductor

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.34 V at I_F= 2.5 A

FEATURES

TMBS^®

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

TO-220AB

TO-262AA

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

• Halogen-free according to IEC 61249-2-21 definition

TYPICAL APPLICATIONS

VT1045C

VIT1045C

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection.

PIN 1

PIN 3

PIN 2

CASE

PIN 3

MECHANICAL DATA

Case: TO-220AB and TO-262AA

Molding compound meets UL 94 V-0 flammability rating

PRIMARY CHARACTERISTICS

I_F(AV)

2 x 5.0 A

45 V

Base P/N-M3

- halogen-free, RoHS compliant, and

V_RRM

commercial grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

I_FSM

100 A

V_Fat I_F= 5.0 A

T_Jmax.

0.41 V

150 °C

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VT1045C

VIT1045C

UNIT

Maximum repetitive peak reverse voltage

V_RRM

per device

per diode

Maximum average forward rectified current (fig. 1)

I_F(AV)

5.0

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

100

Operating junction and storage temperature range

T_J, T_STG

- 40 to + 150

°C

Document Number: 89348

Revision: 30-Nov-10

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

12 3 4 5

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