Datasheet > VT10200C-M3

VT10200C-M3

更新时间： 2024-11-15 14:48:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	152K
描述
Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A

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VT10200C-M3 数据手册

VT10200C-M3

Vishay General Semiconductor

www.vishay.com

Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.58 V at I_F= 2.5 A

FEATURES

TMBS^®

TO-220AB

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, DC/DC

converters, and reverse battery protection.

VT10200C

PIN 1

PIN 3

PIN 2

CASE

MECHANICAL DATA

Case: TO-220AB

Molding compound meets UL 94 V-0 flammability rating

PRIMARY CHARACTERISTICS

Package

TO-220AB

2 x 5.0 A

200 V

Base P/N-M3

- halogen-free, RoHS-compliant, and

I_F(AV)

commercial grade

V_RRM

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

I_FSM

80 A

V_Fat I_F= 5.0 A

T_Jmax.

0.65 V

150 °C

Polarity: As marked

Diode variations

Common cathode

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VT10200C

200

UNIT

Maximum repetitive peak reverse voltage

V_RRM

per device

Maximum average forward rectified current (fig. 1)

per diode

10.0

I_F(AV)

I_FSM

5.0

Peak forward surge current 8.3 ms single half sine-wave superimposed

on rated load per diode

Voltage rate of change (rated V_R)

dV/dt

10 000

V/μs

°C

Operating junction and storage temperature range

T_J, T_STG

-40 to +150

ELECTRICAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

MAX.

UNIT

Breakdown voltage

_R= 1.0 mA

T_A= 25 °C

V_BR

200 (minimum)

I_F= 2.5 A

I_F= 5.0 A

I_F= 2.5 A

I_F= 5.0 A

0.81

1.10

0.58

0.65

1.7

T_A= 25 °C

1.60

(1)

Instantaneous forward voltage per diode

Reverse current per diode

V_F

T_A= 125 °C

0.73

T_A= 25 °C

T_A= 125 °C

T_A= 25 °C

T_A= 125 °C

μA

V_R= 180 V

V_R= 200 V

1.8

(2)

I_R

150

2.5

Notes

(1)

Pulse test: 300 μs pulse width, 1 % duty cycle

Pulse test: Pulse width  40 ms

(2)

Revision: 01-Dec-16

Document Number: 87997

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与VT10200C-M3相关器件

型号	品牌	获取价格	描述	数据表
VT10200C-M3/4W	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 200V V(RRM), Silicon, TO-220AB, HALOGEN
VT10202C, VFT10202C, VBT10202C, VIT10202C	VISHAY	获取价格	Dual High Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.58 V at I
VT10202C-M3/4W	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 200V V(RRM), Silicon, TO-220AB,
VT10219000J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block
VT1045BP	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
VT1045BP-M3/4W	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
VT1045C	VISHAY	获取价格	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
VT1045C_11	VISHAY	获取价格	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
VT1045CBP	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
VT1045CBP_12	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier

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