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VS-MBRB3030CTR-M3 PDF预览

VS-MBRB3030CTR-M3

更新时间: 2024-11-22 01:15:39
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 158K
描述
Very low forward voltage drop

VS-MBRB3030CTR-M3 数据手册

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VS-MBRB3030CTL-M3  
www.vishay.com  
Vishay Semiconductors  
High Performance Schottky Rectifier, 2 x 15 A  
FEATURES  
Base  
common  
cathode  
2
• 150 °C TJ operation  
• Center tap configuration  
• Very low forward voltage drop  
• High frequency operation  
2
Common  
cathode  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
3
1
D2PAK  
Anode  
Anode  
1
2
• Guard ring for enhanced ruggedness and long  
term reliability  
PRODUCT SUMMARY  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
IF(AV)  
2 x 15 A  
VR  
30 V  
0.34 V  
• Designed and qualified according to JEDEC®-JESD 47  
VF at IF  
IRM  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
183 mA at 125 °C  
150 °C  
TJ max.  
EAS  
DESCRIPTION  
13 mJ  
This center tap Schottky rectifier has been optimized for  
very low forward voltage drop, with moderate leakage. The  
proprietary barrier technology allows for reliable operation  
up to 150 °C junction temperature. Typical applications are  
in switching power supplies, converters, freewheeling  
diodes, and reverse battery protection.  
Package  
Diode variation  
TO-263AB (D2PAK)  
Common cathode  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
30  
UNITS  
Rectangular waveform  
A
V
30  
tp = 5 μs sine  
1100  
A
VF  
15 Apk, TJ = 125 °C (per leg)  
Range  
0.34  
V
TJ  
-55 to 150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VS-MBRB3030CTL-M3  
UNITS  
Maximum DC reverse voltage  
VR  
30  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum average  
forward current   
See fig. 5  
per leg  
15  
30  
IF(AV)  
50 % duty cycle at TC = 121 °C rectangular waveform  
per device  
A
Maximum peak one cycle   
non-repetitive surge current per leg  
See fig. 7  
Following any rated  
load condition and with  
rated VRRM applied  
5 μs sine or 3 μs rect. pulse  
1100  
IFSM  
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 3 A, L = 2.9 mH  
360  
13  
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
EAS  
IAR  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
3
Revision: 03-Mar-14  
Document Number: 94954  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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