VS-MBRB3030CTL-M3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 15 A
FEATURES
Base
common
cathode
2
• 150 °C TJ operation
• Center tap configuration
• Very low forward voltage drop
• High frequency operation
2
Common
cathode
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
3
1
D2PAK
Anode
Anode
1
2
• Guard ring for enhanced ruggedness and long
term reliability
PRODUCT SUMMARY
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
IF(AV)
2 x 15 A
VR
30 V
0.34 V
• Designed and qualified according to JEDEC®-JESD 47
VF at IF
IRM
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
183 mA at 125 °C
150 °C
TJ max.
EAS
DESCRIPTION
13 mJ
This center tap Schottky rectifier has been optimized for
very low forward voltage drop, with moderate leakage. The
proprietary barrier technology allows for reliable operation
up to 150 °C junction temperature. Typical applications are
in switching power supplies, converters, freewheeling
diodes, and reverse battery protection.
Package
Diode variation
TO-263AB (D2PAK)
Common cathode
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
CHARACTERISTICS
VALUES
30
UNITS
Rectangular waveform
A
V
30
tp = 5 μs sine
1100
A
VF
15 Apk, TJ = 125 °C (per leg)
Range
0.34
V
TJ
-55 to 150
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VS-MBRB3030CTL-M3
UNITS
Maximum DC reverse voltage
VR
30
V
Maximum working peak reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average
forward current
See fig. 5
per leg
15
30
IF(AV)
50 % duty cycle at TC = 121 °C rectangular waveform
per device
A
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
Following any rated
load condition and with
rated VRRM applied
5 μs sine or 3 μs rect. pulse
1100
IFSM
10 ms sine or 6 ms rect. pulse
TJ = 25 °C, IAS = 3 A, L = 2.9 mH
360
13
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
EAS
IAR
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
3
Revision: 03-Mar-14
Document Number: 94954
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000