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VS-MBRB4045CTHM3 PDF预览

VS-MBRB4045CTHM3

更新时间: 2024-11-25 19:54:39
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
10页 240K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 45V V(RRM), Silicon, TO-263AB, D2PAK-3/2

VS-MBRB4045CTHM3 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:D2PAK-3/2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.7其他特性:FREE WHEELING DIODE
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.8 V
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:210 A元件数量:2
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:20 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260参考标准:AEC-Q101
最大重复峰值反向电压:45 V最大反向电流:1000 µA
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:40
Base Number Matches:1

VS-MBRB4045CTHM3 数据手册

 浏览型号VS-MBRB4045CTHM3的Datasheet PDF文件第2页浏览型号VS-MBRB4045CTHM3的Datasheet PDF文件第3页浏览型号VS-MBRB4045CTHM3的Datasheet PDF文件第4页浏览型号VS-MBRB4045CTHM3的Datasheet PDF文件第5页浏览型号VS-MBRB4045CTHM3的Datasheet PDF文件第6页浏览型号VS-MBRB4045CTHM3的Datasheet PDF文件第7页 
VS-MBRB4045CTHM3, VS-MBR4045CT-1HM3  
www.vishay.com  
Vishay Semiconductors  
Schottky Rectifier, 2 x 20 A  
FEATURES  
VS-MBR4045CT-1HM3  
VS-MBRB4045CTHM3  
• 150 °C TJ operation  
• Low forward voltage drop  
• High frequency operation  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
Base  
common  
cathode  
Base  
common  
cathode  
• Guard ring for enhanced ruggedness and long  
term reliability  
2
2
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
2
2
• AEC-Q101 qualified, meets JESD 201 class 1A whisker  
test  
1
1
3
3
Common  
cathode  
Common  
cathode  
Anode  
Anode  
Anode  
Anode  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
D2PAK  
TO-262  
PRODUCT SUMMARY  
DESCRIPTION  
Package  
TO-263AB (D2PAK), TO-262AA  
The center tap Schottky rectifier has been optimized for low  
reverse leakage at high temperature. The proprietary barrier  
technology allows for reliable operation up to 150 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
IF(AV)  
2 x 20 A  
45 V  
VR  
VF at IF  
0.58 V  
I
RM max.  
95 mA at 125 °C  
150 °C  
TJ max.  
Diode variation  
EAS  
Common cathode  
20 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
IFRM  
VRRM  
IFSM  
CHARACTERISTICS  
Rectangular waveform (per device)  
TC = 117 °C (per leg)  
VALUES  
40  
UNITS  
A
40  
45  
V
A
tp = 5 μs sine  
20 Apk, TJ = 125 °C  
Range  
900  
VF  
0.58  
V
TJ  
-65 to 150  
°C  
VOLTAGE RATINGS  
PARAMETER  
VS-MBRB4045CTHM3  
VS-MBR4045CT-1HM3  
SYMBOL  
UNITS  
Maximum DC reverse voltage  
VR  
45  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
per leg  
20  
40  
Maximum average  
IF(AV)  
IFRM  
TC = 118 °C, rated VR  
Rated VR, square wave, 20 kHz, TC = 117 °C  
forward current  
per device  
Peak repetitive forward current per leg  
40  
A
5 μs sine or 3 μs rect. pulse  
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 3 A, L = 4.4 mH  
Following any rated  
load condition and with  
rated VRRM applied  
900  
Maximum peak one cycle non-repetitive  
peak surge current per leg  
IFSM  
210  
20  
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
EAS  
IAR  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
3
Revision: 06-Mar-14  
Document Number: 94721  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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