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VS-MBRB4045CTTRLP

更新时间： 2024-11-21 14:45:35
品牌 Logo 应用领域
威世 - VISHAY 高功率电源二极管
页数 文件大小 规格书
8页 267K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 45V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3

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VS-MBRB4045CTTRLP 技术参数

是否Rohs认证：符合生命周期：Obsolete
零件包装代码：TO-263包装说明：R-PSSO-G2
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.42Is Samacsys：N
其他特性：FREEWHEELING DIODE, HIGH RELIABILITY应用：HIGH POWER
外壳连接：CATHODE配置：COMMON CATHODE, 2 ELEMENTS
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：0.58 VJESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：1
最大非重复峰值正向电流：900 A元件数量：2
相数：1端子数量：2
最高工作温度：150 °C最低工作温度：-65 °C
最大输出电流：20 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260认证状态：Not Qualified
最大重复峰值反向电压：45 V子类别：Rectifier Diodes
表面贴装：YES技术：SCHOTTKY
端子面层：MATTE TIN OVER NICKEL端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：10
Base Number Matches：1

VS-MBRB4045CTTRLP 数据手册

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VS-MBRB4045CTPbF, VS-MBR4045CT-1PbF  
www.vishay.com  
Vishay Semiconductors  
High Performance Schottky Rectifier, 2 x 20 A  
TO-263AB (D2PAK)  
FEATURES  
TO-262AA  
• 150 °C TJ operation  
• Low forward voltage drop  
• High frequency operation  
• Center tap TO-220, D2PAK and TO-262  
packages  
Base  
common  
cathode  
Base  
common  
cathode  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
2
2
• Guard ring for enhanced ruggedness and long term  
reliability  
2
2
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
1
1
3
3
Common  
cathode  
Common  
cathode  
Anode  
Anode  
Anode  
Anode  
• AEC-Q101 qualified  
VS-MBR4045CT-1PbF  
VS-MBRB4045CTPbF  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRODUCT SUMMARY  
Package  
TO-263AB (D2PAK), TO-262AA  
DESCRIPTION  
IF(AV)  
40 A  
45 V  
VR  
The center tap Schottky rectifier has been optimized for low  
reverse leakage at high temperature. The proprietary barrier  
technology allows for reliable operation up to 150 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
VF at IF  
0.58 V  
I
RM max.  
95 mA at 125 °C  
150 °C  
TJ max.  
Diode variation  
EAS  
Common cathode  
20 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
CHARACTERISTICS  
VALUES  
UNITS  
IF(AV)  
IFRM  
VRRM  
IFSM  
VF  
Rectangular waveform (per device)  
TC = 118 °C (per leg)  
40  
40  
A
45  
V
A
tp = 5 μs sine  
20 Apk, TJ = 125 °C  
Range  
900  
0.58  
V
TJ  
-65 to +150  
°C  
VOLTAGE RATINGS  
VS-MBRB4045CTPbF  
VS-MBR4045CT-1PbF  
PARAMETER  
SYMBOL  
UNITS  
Maximum DC reverse voltage  
VR  
45  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
TC = 118 °C, rated VR  
Rated VR, square wave, 20 kHz, TC = 118 °C  
VALUES  
UNITS  
per leg  
20  
40  
40  
Maximum average  
forward current  
IF(AV)  
IFRM  
per device  
Peak repetitive forward current per leg  
A
Following any rated load  
condition and with rated  
5 μs sine or 3 μs rect. pulse  
900  
Maximum peak one cycle non-repetitive  
peak surge current per leg  
IFSM  
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 3 A, L = 4.4 mH  
210  
20  
V
RRM applied  
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
EAS  
IAR  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
3
Revision: 15-Jul-14  
Document Number: 94311  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345678

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