Datasheet > VS-MBRB3035CT-M3

VS-MBRB3035CT-M3

更新时间： 2024-09-27 00:56:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	770K
描述
Low forward voltage drop

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中文翻译

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数据手册

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VS-MBRB3035CT-M3 数据手册

VS-MBRB30..CT-M3, VS-MBR30..CT-M3

www.vishay.com

Vishay Semiconductors

High Performance Schottky Rectifiers, 2 x 15 A

FEATURES

TO 263AB (D²PAK)

TO-262AA

• 150 °C T_Joperation

• Low forward voltage drop

• High frequency operation

• Center tap D²PAK and TO-262 packages

Base

common

cathode

Base

common

cathode

• High purity, high temperature epoxy

encapsulation for enhanced mechanical

strength and moisture resistance

• Guard ring for enhanced ruggedness and long term

reliability

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

• Designed and qualified according to JEDEC^®-JESD 47

Common

cathode

Common

cathode

Anode

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

VS-MBR30..CT-1-M3

VS-MBRB30..CT-M3

DESCRIPTION

PRODUCT SUMMARY

This center tap Schottky rectifier has been optimized for low

reverse leakage at high temperature. The proprietary barrier

technology allows for reliable operation up to 150 °C

junction temperature. Typical applications are in switching

power supplies, converters, freewheeling diodes, and

reverse battery protection.

I_F(AV)

2 x 15 A

35 V, 45 V

V_R

V_Fat I_F

See datasheet

100 mA at 125 °C

150 °C

I_RMmax.

T_Jmax.

E_AS



10 mJ

Package

Diode variation

TO-263AB (D²PAK), TO-262AA

Common cathode

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

I_FRM

CHARACTERISTICS

Rectangular waveform (per device)

T_C= 123 °C (per leg)

VALUES

UNITS

V_RRM

I_FSM

35/45

1020

t_p= 5 μs sine

20 A_pk, T_J= 125 °C

Range

V_F

0.6

T_J

-65 to +150

°C

VOLTAGE RATINGS

VS-MBRB3035CT-M3

VS-MBR3035CT-1-M3

VS-MBRB3045CT-M3

VS-MBR3045CT-1-M3

PARAMETER

SYMBOL

UNITS

Maximum DC reverse voltage

V_R

Maximum working peak reverse voltage

V_RWM

Revision: 03-Mar-14

Document Number: 94953

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

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与VS-MBRB3035CT-M3相关器件

型号	品牌	获取价格	描述	数据表
VS-MBRB3035CTPbF	KERSEMI	获取价格	This center tap Schottky rectifier has been optimized for low
VS-MBRB3035CTPBF	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 35V V(RRM), Silicon, PLASTIC, D2PAK-3
VS-MBRB3035CTR-1-M3	VISHAY	获取价格	Low forward voltage drop
VS-MBRB3035CTTRLP	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 35V V(RRM), Silicon, PLASTIC, D2PAK-3
VS-MBRB3045CTL-M3	VISHAY	获取价格	Low forward voltage drop
VS-MBRB3045CT-M3	VISHAY	获取价格	Low forward voltage drop
VS-MBRB3045CTPbF	KERSEMI	获取价格	This center tap Schottky rectifier has been optimized for low
VS-MBRB3045CTR-1-M3	VISHAY	获取价格	Low forward voltage drop
VS-MBRB3045CTTRRP	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, PLASTIC, D2PAK-3
VS-MBRB30CT-M3	VISHAY	获取价格	Low forward voltage drop

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