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VS-MBRB3035CT-1PBF

更新时间： 2024-11-21 14:36:43
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
8页 157K
描述
Rectifier Diode,

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VS-MBRB3035CT-1PBF 技术参数

生命周期：ActiveReach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.71
二极管类型：RECTIFIER DIODEBase Number Matches：1

VS-MBRB3035CT-1PBF 数据手册

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VS-MBRB30..CTPbF, VS-MBR30..CT-1PbF Series  
www.vishay.com  
Vishay Semiconductors  
High Performance Schottky Rectifier, 2 x 15 A  
TO-263AB (D2PAK)  
FEATURES  
TO-262AA  
• 150 °C TJ operation  
• Low forward voltage drop  
• High frequency operation  
• Center tap D2PAK and TO-262 packages  
Base  
common  
cathode  
2
Base  
common  
cathode  
2
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
• Guard ring for enhanced ruggedness and long term  
reliability  
2
2
1
1
3
3
Common  
cathode  
VS-MBRB30..CTPbF  
Common  
cathode  
VS-MBR30..CT-1PbF  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
Anode  
Anode  
Anode  
Anode  
• AEC-Q101 qualified  
PRODUCT SUMMARY  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
Package  
TO-263AB (D2PAK), TO-262AA  
IF(AV)  
30 A  
35 V, 45 V  
0.6 V  
DESCRIPTION  
VR  
This center tap Schottky rectifier has been optimized for low  
reverse leakage at high temperature. The proprietary barrier  
technology allows for reliable operation up to 150 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
VF at IF  
I
RM max.  
100 mA at 125 °C  
150 °C  
TJ max.  
Diode variation  
EAS  
Single die  
10.0 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
IFRM  
CHARACTERISTICS  
VALUES  
30  
UNITS  
Rectangular waveform (per device)  
TC = 123 °C (per leg)  
A
30  
VRRM  
IFSM  
35, 45  
1020  
V
A
tp = 5 μs sine  
20 Apk, TJ = 125 °C  
Range  
VF  
0.6  
V
TJ  
-65 to +150  
°C  
VOLTAGE RATINGS  
VS-MBRB3035CTPbF  
SYMBOL  
VS-MBRB3045CTPbF  
VS-MBR3045CT-1PbF  
PARAMETER  
UNITS  
VS-MBR3035CT-1PbF  
Maximum DC reverse voltage  
VR  
35  
45  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
IF(AV)  
IFRM  
TEST CONDITIONS  
TC = 123 °C, rated VR  
Rated VR, square wave, 20 kHz, TC = 123 °C  
VALUES  
UNITS  
per leg  
15  
30  
30  
Maximum average  
forward current  
per device  
Peak repetitive forward current per leg  
Non-repetitive peak surge current  
A
5 μs sine or 3 μs  
rect. pulse  
Following any rated load condition  
and with rated VRRM applied  
1020  
IFSM  
Surge applied at rated load conditions halfwave,  
single phase, 60 Hz  
200  
10  
2
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
EAS  
IAR  
TJ = 25 °C, IAS = 2 A, L = 5 mH  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
Revision: 15-Jul-14  
Document Number: 94310  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345678

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