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VS-MBRB3030CTLTRLP PDF预览

VS-MBRB3030CTLTRLP

更新时间: 2024-11-25 20:36:07
品牌 Logo 应用领域
威世 - VISHAY 高功率电源二极管
页数 文件大小 规格书
7页 160K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 30V V(RRM), Silicon, PLASTIC, D2PAK-3

VS-MBRB3030CTLTRLP 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-263包装说明:R-PSSO-G2
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.45其他特性:FREE WHEELING DIODE, HIGH RELIABILITY
应用:HIGH POWER外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.34 V
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:1100 A
元件数量:2相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:15 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:30 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:MATTE TIN OVER NICKEL
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:10Base Number Matches:1

VS-MBRB3030CTLTRLP 数据手册

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VS-MBRB3030CTLPbF  
www.vishay.com  
Vishay Semiconductors  
High Performance Schottky Rectifier, 2 x 15 A  
FEATURES  
Base  
common  
• 150 °C TJ operation  
cathode  
2
• Center tap configuration  
• Very low forward voltage drop  
• High frequency operation  
2
Common  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
cathode  
3
1
TO-263AB (D2PAK)  
Anode  
Anode  
1
2
• Guard ring for enhanced ruggedness and long term  
reliability  
PRODUCT SUMMARY  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
Package  
TO-263AB (D2PAK)  
2 x 15 A  
IF(AV)  
• AEC-Q101 qualified  
VR  
30 V  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
VF at IF  
0.47 V  
I
RM max.  
183 mA at 125 °C  
150 °C  
TJ max.  
Diode variation  
EAS  
DESCRIPTION  
Common cathode  
13 mJ  
This center tap Schottky rectifier has been optimized for  
very low forward voltage drop, with moderate leakage. The  
proprietary barrier technology allows for reliable operation  
up to 150 °C junction temperature. Typical applications are  
in switching power supplies, converters, freewheeling  
diodes, and reverse battery protection.  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
30  
UNITS  
Rectangular waveform  
A
V
30  
tp = 5 μs sine  
1100  
A
VF  
15 Apk, TJ = 125 °C (per leg)  
Range  
0.34  
V
TJ  
-55 to +150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
VS-MBRB3030CTLPbF  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
30  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum average  
forward current   
See fig. 5  
per leg  
15  
30  
IF(AV)  
50 % duty cycle at TC = 121 °C rectangular waveform  
per device  
A
Maximum peak one cycle   
non-repetitive surge current per leg  
See fig. 7  
Following any rated  
load condition and with  
rated VRRM applied  
5 μs sine or 3 μs rect. pulse  
1100  
IFSM  
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 3 A, L = 2.9 mH  
360  
13  
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
EAS  
IAR  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
3
Revision: 18-Oct-16  
Document Number: 94309  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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