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VS-MBRB1045PBF PDF预览

VS-MBRB1045PBF

更新时间: 2024-02-05 17:23:26
品牌 Logo 应用领域
威世 - VISHAY 高功率电源二极管
页数 文件大小 规格书
7页 141K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 45V V(RRM), Silicon, D2PAK-3

VS-MBRB1045PBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-263
包装说明:R-PSSO-G2针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.41
其他特性:FREEWHEELING DIODE应用:HIGH POWER
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.57 VJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:1060 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:45 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:MATTE TIN OVER NICKEL端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:10
Base Number Matches:1

VS-MBRB1045PBF 数据手册

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VS-MBRB1035PbF, VS-MBRB1045PbF  
Vishay High Power Products  
Schottky Rectifier, 10 A  
FEATURES  
• 150 °C TJ operation  
• TO-220 and D2PAK packages  
• Low forward voltage drop  
Base  
cathode  
2
• High frequency operation  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
• Guard ring for enhanced ruggedness and long  
term reliability  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
3
1
D2PAK  
N/C  
Anode  
• Halogen-free according to IEC 61249-2-21 definition  
• Compliant to RoHS directive 2002/95/EC  
• AEC-Q101 qualified  
PRODUCT SUMMARY  
DESCRIPTION  
IF(AV)  
10 A  
35 V/45 V  
15 mA at 125 °C  
This Schottky rectifier has been optimized for low reverse  
leakage at high temperature. The proprietary barrier  
technology allows for reliable operation up to 150 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
VR  
IRM  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
IFRM  
CHARACTERISTICS  
Rectangular waveform  
TC = 135 °C  
VALUES  
10  
UNITS  
A
20  
VRRM  
IFSM  
35/45  
1060  
V
A
tp = 5 μs sine  
10 Apk, TJ = 125 °C  
Range  
VF  
0.57  
V
TJ  
- 65 to 150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VS-MBRB1035PbF  
VS-MBRB1045PbF  
UNITS  
Maximum DC reverse voltage  
VR  
35  
45  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum average forward current  
Peak repetitive forward current  
IF(AV)  
TC = 135 °C, rated VR  
10  
20  
IFRM  
Rated VR, square wave, 20 kHz, TC = 135 °C  
Following any rated load  
5 μs sine or 3 μs rect. pulse condition and with rated  
RRM applied  
A
1060  
V
Non-repetitive surge current  
IFSM  
Surge applied at rated load conditions halfwave,  
single phase, 60 Hz  
150  
8
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
TJ = 25 °C, IAS = 2 A, L = 4 mH  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
2
Document Number: 94302  
Revision: 15-Mar-10  
For technical questions, contact: diodestech@vishay.com  
www.vishay.com  
1

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