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VS-MBRB1045-M3 PDF预览

VS-MBRB1045-M3

更新时间: 2024-01-08 11:54:23
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
8页 172K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 45V V(RRM), Silicon, TO-263AB, D2PAK-3/2

VS-MBRB1045-M3 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PSSO-G2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:26 weeks风险等级:5.66
其他特性:FREE WHEELING DIODE应用:GENERAL PURPOSE
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.84 VJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:150 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):245
最大重复峰值反向电压:45 V最大反向电流:100 µA
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
Base Number Matches:1

VS-MBRB1045-M3 数据手册

 浏览型号VS-MBRB1045-M3的Datasheet PDF文件第1页浏览型号VS-MBRB1045-M3的Datasheet PDF文件第3页浏览型号VS-MBRB1045-M3的Datasheet PDF文件第4页浏览型号VS-MBRB1045-M3的Datasheet PDF文件第5页浏览型号VS-MBRB1045-M3的Datasheet PDF文件第6页浏览型号VS-MBRB1045-M3的Datasheet PDF文件第7页 
VS-MBRB1035-M3, VS-MBRB1045-M3  
www.vishay.com  
Vishay Semiconductors  
ELECTRICAL SPECIFICATIONS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
0.84  
0.57  
0.72  
0.1  
UNITS  
20 A  
TJ = 25 °C  
(1)  
Maximum forward voltage drop  
VFM  
10 A  
V
TJ = 125 °C  
20 A  
TJ = 25 °C  
TJ = 125 °C  
Maximum instantaneous reverse  
current  
(1)  
IRM  
Rated DC voltage  
mA  
15  
Threshold voltage  
VF(TO)  
rt  
0.354  
17.6  
600  
V
TJ = TJ maximum  
Forward slope resistance  
Maximum junction capacitance  
Typical series inductance  
Maximum voltage rate of change  
m  
pF  
CT  
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C  
Measured from top of terminal to mounting plane  
Rated VR  
LS  
8.0  
nH  
dV/dt  
10 000  
V/μs  
Note  
(1)  
Pulse width < 300 μs, duty cycle < 2 %  
THERMAL - MECHANICAL SPECIFICATIONS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
- 65 to 150  
- 65 to 175  
UNITS  
Maximum junction temperature range  
Maximum storage temperature range  
TJ  
°C  
TStg  
Maximum thermal resistance,   
junction to case  
RthJC  
RthCS  
DC operation  
2.0  
°C/W  
Typical thermal resistance,   
case to heatsink  
Mounting surface, smooth and greased   
(Only for TO-220)  
0.50  
2
g
Approximate weight  
0.07  
oz.  
minimum  
Mounting torque  
6 (5)  
kgf · cm  
(lbf · in)  
maximum  
12 (10)  
MBRB1035  
Marking device  
Case style D2PAK  
MBRB1045  
Revision: 28-Feb-14  
Document Number: 94947  
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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