Datasheet > VS-MBR150-M3

VS-MBR150-M3

更新时间： 2024-02-08 07:37:58

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	119K
描述
Schottky Rectifier,

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

VS-MBR150-M3 数据手册

VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3

www.vishay.com

Vishay Semiconductors

Schottky Rectifier, 1 A

FEATURES

• Low profile, axial leaded outline

• Very low forward voltage drop

• High frequency operation

Cathode

Anode

• High purity, high

temperature

epoxy

encapsulation for enhanced mechanical strength

and moisture resistance

DO-204AL

• Guard ring for enhanced ruggedness and long

term reliability

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for commercial level

PRODUCT SUMMARY

Package

DO-204AL (DO-41)

1 A

• Halogen-free according to IEC 61249-2-21 definition

(-M3 only)

I_F(AV)

V_R

50 V, 60 V

0.65 V

DESCRIPTION

V_Fat I_F

The VS-MBR... axial leaded Schottky rectifier has been

optimized for very low forward voltage drop, with moderate

leakage. Typical applications are in switching power

supplies, converters, freewheeling diodes, and reverse

battery protection.

_RMmax.

10.0 mA at 125 °C

150 °C

T_Jmax.

Diode variation

E_AS

Single die

2.0 mJ

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FSM

CHARACTERISTICS

VALUES

1.0

UNITS

Rectangular waveform

50/60

t_p= 5 μs sine

1 Apk, T_J= 125 °C

Range

150

V_F

0.65

T_J

- 40 to 150

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

VS-MBR150

VS-MBR150-M3

VS-MBR160

VS-MBR160-M3 UNITS

Maximum DC reverse voltage

V_R

Maximum working peak reverse voltage

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average forward current

See fig. 4

I_F(AV)

50 % duty cycle at T_C= 75 °C, rectangular waveform

1.0

Maximum peak one cycle

non-repetitive surge current

See fig. 6

5 µs sine or 3 µs rect. pulse

150

Followinganyratedload

condition and with rated

I_FSM

V_RRMapplied

10 ms sine or 6 ms rect. pulse

Non-repetitive avalanche energy

Repetitive avalanche current

E_AS

I_AR

T_J= 25 °C, I_AS= 1 A, L = 4 mH

2.0

Current decaying linearly to zero in 1 μs

Frequency limited by, T_Jmaximum V_A= 1.5 x V_Rtypical

1.0

Revision: 20-Sep-11

Document Number: 93439

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

中文翻译

下载PDF

与VS-MBR150-M3相关器件

型号	品牌	获取价格	描述	数据表
VS-MBR150TR	VISHAY	获取价格	DIODE SCHOTTKY 50V 1A DO204AL
VS-MBR150TR-M3	VISHAY	获取价格	DIODE SIGNAL DIODE, Signal Diode
VS-MBR1535CT-1-M3	VISHAY	获取价格	Low forward voltage drop
VS-MBR1535CT-1PBF	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 7.5A, 35V V(RRM), Silicon, TO-262AA, PLASTI
VS-MBR1535CT-M3	VISHAY	获取价格	High Performance Schottky Rectifier, 2 x 7.5 A
VS-MBR1535CT-N3	VISHAY	获取价格	Low forward voltage drop
VS-MBR1535CTPbF	VISHAY	获取价格	Low forward voltage drop
VS-MBR1545CT-1-M3	VISHAY	获取价格	Low forward voltage drop
VS-MBR1545CT-1PBF	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 7.5A, 45V V(RRM), Silicon, TO-262AA, PLASTI
VS-MBR1545CT-N3	VISHAY	获取价格	Low forward voltage drop

与VS-MBR150-M3相关文章

解析BAV99LT1G手册：参数分析、替换型号推荐
2024-06-26

1
解读BSS138PW数据手册：产品特性、电气参数及替换型号推荐
2024-06-26

2
CR2032资料手册解读：参数分析、替换型号推荐
2024-06-26

1
CDSOT23-SM712参数分析、替代型号推荐
2024-06-26

1

产品中心

服务支持

精选活动

关于我们

帮助中心

VS-MBR150-M3

VS-MBR150-M3 数据手册

与VS-MBR150-M3相关器件

与VS-MBR150-M3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

VS-MBR150-M3

VS-MBR150-M3 数据手册

与VS-MBR150-M3相关器件

与VS-MBR150-M3相关文章

您还可以找

您在本页遇到什么问题？