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VS-MBR1535CT-M3 PDF预览

VS-MBR1535CT-M3

更新时间: 2023-12-06 20:11:57
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 157K
描述
High Performance Schottky Rectifier, 2 x 7.5 A

VS-MBR1535CT-M3 数据手册

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VS-MBR1535CT-M3, VS-MBR1545CT-M3  
www.vishay.com  
Vishay Semiconductors  
High Performance Schottky Rectifier, 2 x 7.5 A  
FEATURES  
Base  
common  
cathode  
2
• 150 °C TJ operation  
• Low forward voltage drop  
• High frequency operation  
• High  
purity,  
high  
temperature  
epoxy  
1
encapsulation for enhanced mechanical  
strength and moisture resistance  
• Guard ring for enhanced ruggedness and long term  
reliability  
2
Anode  
Anode  
2
Common  
cathode  
1
3
3
TO-220AB 3L  
• Designed and qualified according to JEDEC®-JESD 47  
PRIMARY CHARACTERISTICS  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
IF(AV)  
2 x 7.5 A  
35 V, 45 V  
0.57 V  
VR  
DESCRIPTION  
VF at IF  
The VS-MBR15...CT... center tap Schottky rectifier has been  
optimized for low reverse leakage at high temperature. The  
proprietary barrier technology allows for reliable operation  
up to 150 °C junction temperature. Typical applications are  
in switching power supplies, converters, freewheeling  
diodes, and reverse battery protection.  
I
RM max.  
15 mA at 125 °C  
150 °C  
TJ max.  
EAS  
7 mJ  
Package  
TO-220AB 3L  
Circuit configuration  
Common cathode  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
CHARACTERISTICS  
VALUES  
15  
UNITS  
IF(AV)  
VRRM  
IFSM  
VF  
Rectangular waveform  
A
V
35/45  
tp = 5 μs sine  
690  
A
7.5 Apk, TJ = 125 °C  
0.57  
V
TJ  
Range  
-65 to +150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
VS-MBR1535CT-M3  
35  
VS-MBR1545CT-M3  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
45  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
7.5  
UNITS  
per leg  
Maximumaverageforward  
current  
IF(AV)  
TC = 131 °C, rated VR  
per device  
15  
Following any rated load  
condition and with rated  
A
5 µs sine or 3 µs rect. pulse  
690  
Maximum peak one cycle non-repetitive  
surge  
V
RRM applied  
IFSM  
Surge applied at rated load condition half wave  
single phase 60 Hz  
150  
7
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
EAS  
IAR  
TJ = 25 °C, IAS = 2 A, L = 3.5 mH  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
2
Revision: 28-Feb-2023  
Document Number: 96281  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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