VS-HFA16TB120-M3
Vishay Semiconductors
www.vishay.com
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Cathode to anode
breakdown voltage
VBR
IR = 100 μA
1200
-
-
IF = 16 A
IF = 32 A
-
-
-
-
-
-
-
2.5
3.2
2.3
0.75
375
27
3.0
3.93
2.7
20
V
Maximum forward voltage
VFM
See fig. 1
IF = 16 A, TJ = 125 °C
VR = VR rated
TJ = 125 °C, VR = 0.8 x VR rated
VR = 200 V
Maximum reverse
leakage current
IRM
See fig. 2
See fig. 3
μA
2000
40
Junction capacitance
Series inductance
CT
LS
pF
nH
Measured lead to lead 5 mm from package body
8.0
-
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1.0 A, diF/dt = 200 A/μs, VR = 30 V
TJ = 25 °C
MIN.
TYP.
30
MAX.
-
UNITS
trr
-
-
-
-
-
-
-
-
Reverse recovery time
See fig. 5 and 10
trr1
90
135
245
10
ns
trr2
TJ = 125 °C
164
5.8
IRRM1
IRRM2
Qrr1
TJ = 25 °C
Peak recovery current
See fig. 6
A
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
IF = 16 A
diF/dt = 200 A/μs
8.3
15
260
680
120
675
1838
-
Reverse recovery charge
See fig. 7
VR = 200 V
nC
Qrr2
Peak rate of fall of
recovery current during tb
See fig. 8
di(rec)M/dt1 TJ = 25 °C
di(rec)M/dt2 TJ = 125 °C
A/μs
-
76
-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Lead temperature
Tlead
0.063" from case (1.6 mm) for 10 s
-
-
300
°C
Thermal resistance,
junction to case
RthJC
RthJA
RthCS
-
-
-
-
-
0.83
80
-
Thermal resistance,
junction to ambient
Typical socket mount
K/W
Thermal resistance,
case to heatsink
Mounting surface, flat, smooth, and greased
0.50
-
-
2.0
-
-
g
Weight
0.07
oz.
6.0
(5.0)
12
(10)
kgf · cm
(lbf · in)
Mounting torque
Marking device
-
Case style 2L TO-220AC
HFA16TB120
Revision: 16-Dec-2021
Document Number: 96192
2
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