Datasheet > VS-60EPS12-M3

VS-60EPS12-M3

更新时间： 2024-12-01 01:13:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	158K
描述
High Voltage Input Rectifier Diode, 60 A

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VS-60EPS12-M3 数据手册

VS-60EPS..PbF Series, VS-60EPS..-M3 Series

www.vishay.com

Vishay Semiconductors

High Voltage Input Rectifier Diode, 60 A

FEATURES

• Very low forward voltage drop

Base

cathode

• 150 °C max. operating junction temperature

• Glass passivated pellet chip junction

• Designed and qualified according to

JEDEC^®-JESD 47

• Material categorization:

for definitions of compliance please see

Available

Cathode

Anode

TO-247AC modiﬁed

www.vishay.com/doc?99912

APPLICATIONS

• Input rectification

PRODUCT SUMMARY

• Vishay Semiconductors switches and output rectifiers

which are available in identical package outlines

Package

TO-247AC modified (2 pins)

I_F(AV)

60 A

800 V to 1200 V

1.09 V

V_R

DESCRIPTION

V_Fat I_F

I_FSM

High voltage rectifiers optimized for very low forward

voltage drop with moderate leakage.

1000 A

These devices are intended for use in main rectification

(single or three phase bridge).

T_Jmax.

Diode variation

150 °C

Single die



MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FSM

CHARACTERISTICS

VALUES

UNITS

Sinusoidal waveform

800/1200

1000

V_F

60 A, T_J= 25 °C

1.09

T_J

-40 to +150

°C

VOLTAGE RATINGS

V_RSM, MAXIMUM

V_RRM, MAXIMUM

PEAK REVERSE VOLTAGE

I_RRM

AT 150 °C

NON-REPETITIVEPEAKREVERSE

PART NUMBER

VOLTAGE

VS-60EPS08PbF, VS-60EPS08-M3

VS-60EPS12PbF, VS-60EPS12-M3

800

900

1200

1300

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average forward current

I_F(AV)

T_C= 118 °C, 180° conduction half sine wave

840

10 ms sine pulse, rated V_RRMapplied

10 ms sine pulse, no voltage reapplied

10 ms sine pulse, rated V_RRMapplied

10 ms sine pulse, no voltage reapplied

t = 0.1 ms to 10 ms, no voltage reapplied

Maximum peak one cycle 

non-repetitive surge current

I_FSM

1000

3530

4220

42 200

Maximum I²t for fusing

I²t

A²s

Maximum I²t for fusing

I²t

A²s

Revision: 12-Feb-16

Document Number: 94345

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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与VS-60EPS12-M3相关器件

型号	品牌	获取价格	描述	数据表
VS-60EPS12PbF	VISHAY	获取价格	High Voltage Input Rectifier Diode, 60 A
VS-60EPS16-M3	VISHAY	获取价格	DIODE RECTIFIER DIODE, Rectifier Diode
VS-60EPS16PBF	VISHAY	获取价格	DIODE 60 A, 1600 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, PLASTIC, MODIFIED TO-247AC,
VS-60EPSPBF	VISHAY	获取价格	High Voltage Input Rectifier Diode, 60 A
VS-60EPU02	VISHAY	获取价格	Rectifier Diode, 1 Phase, 2 Element, 60A, Silicon, MODIFIED TO-247AC, 2 PIN
VS-60EPU02-N3	VISHAY	获取价格	Ultrafast Soft Recovery Diode, 60 A FRED PtÂ®
VS-60EPU02PBF	VISHAY	获取价格	DIODE 60 A, 200 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, MODIFIED TO-247AC, 2 PIN, Rec
VS-60EPU04HN3	VISHAY	获取价格	Rectifier Diode,
VS-60EPU04-N3	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 60A, 400V V(RRM), Silicon, MODIFIED TO-247AC, 2 PIN
VS-60EPU04PBF	VISHAY	获取价格	Low forward voltage drop

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