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VS-60EPU06-N3 PDF预览

VS-60EPU06-N3

更新时间: 2024-11-05 12:47:23
品牌 Logo 应用领域
威世 - VISHAY 整流二极管局域网超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
9页 209K
描述
Ultrafast Soft Recovery Diode, 60 A FRED Pt®

VS-60EPU06-N3 技术参数

生命周期:Active包装说明:R-PSFM-T2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.51
Is Samacsys:N应用:ULTRA FAST SOFT RECOVERY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.68 VJESD-30 代码:R-PSFM-T2
最大非重复峰值正向电流:600 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:60 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:600 V
最大反向电流:50 µA最大反向恢复时间:0.045 µs
子类别:Rectifier Diodes表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

VS-60EPU06-N3 数据手册

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VS-60EPU06PbF, VS-60EPU06-N3, VS-60APU06PbF, VS-60APU06-N3  
www.vishay.com  
Vishay Semiconductors  
Ultrafast Soft Recovery Diode, 60 A FRED Pt®  
FEATURES  
• Ultrafast recovery time  
• Low forward voltage drop  
• 175 °C operating junction temperature  
• Compliant to RoHS Directive 2002/95/EC  
TO-247AC modified  
TO-247AC  
• Designed  
JEDEC-JESD47  
and  
qualified  
according  
to  
Cathode  
to base  
Cathode  
to base  
2
2
• Halogen-free according to IEC 61249-2-21  
definition (-N3 only)  
BENEFITS  
• Reduced RFI and EMI  
• Higher frequency operation  
• Reduced snubbing  
3
3
1
Anode  
1
Anode  
Cathode  
Anode  
VS-60EPU06PbF  
VS-60EPU06-N3  
VS-60APU06PbF  
VS-60APU06-N3  
• Reduced parts count  
DESCRIPTION/APPLICATIONS  
PRODUCT SUMMARY  
TO-247AC,  
TO-247AC modified (2 pins)  
These diodes are optimized to reduce losses and EMI/RFI in  
high frequency power conditioning systems.  
Package  
IF(AV)  
VR  
60 A  
600 V  
The softness of the recovery eliminates the need for a  
snubber in most applications. These devices are ideally  
suited for HF welding, power converters and other  
applications where switching losses are not significant  
portion of the total losses.  
VF at IF  
1.68 V  
t
rr typ.  
See Recovery table  
175 °C  
TJ max.  
Diode variation  
Single die  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VR  
TEST CONDITIONS  
MAX.  
600  
UNITS  
Cathode to anode voltage  
V
Continuous forward current  
IF(AV)  
TC = 116 °C  
60  
Single pulse forward current  
IFSM  
TC = 25 °C  
600  
A
Maximum repetitive forward current  
Operating junction and storage temperatures  
IFRM  
Square wave, 20 kHz  
120  
TJ, TStg  
- 55 to 175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
IF = 60 A  
600  
-
-
-
-
-
-
-
-
1.35  
1.20  
1.11  
-
1.68  
1.42  
1.30  
50  
V
Forward voltage  
VF  
IF = 60 A, TJ = 125 °C  
IF = 60 A, TJ = 175 °C  
VR = VR rated  
Reverse leakage current  
Junction capacitance  
IR  
μA  
pF  
TJ = 150 °C, VR = VR rated  
VR = 600 V  
-
500  
-
CT  
39  
Revision: 15-Aug-11  
Document Number: 94023  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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