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VS-60EPU02 PDF预览

VS-60EPU02

更新时间: 2024-11-30 15:57:43
品牌 Logo 应用领域
威世 - VISHAY 超快软恢复二极管快速软恢复二极管局域网
页数 文件大小 规格书
7页 122K
描述
Rectifier Diode, 1 Phase, 2 Element, 60A, Silicon, MODIFIED TO-247AC, 2 PIN

VS-60EPU02 技术参数

生命周期:Obsolete零件包装代码:TO-247AC
包装说明:R-PSFM-T2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.82
应用:ULTRA FAST SOFT RECOVERY外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PSFM-T2
最大非重复峰值正向电流:800 A元件数量:2
相数:1端子数量:2
最大输出电流:60 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
认证状态:Not Qualified最大反向恢复时间:0.035 µs
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLEBase Number Matches:1

VS-60EPU02 数据手册

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VS-60EPU02PbF, VS-60APU02PbF  
Vishay Semiconductors  
Ultrafast Soft Recovery Diode,  
60 A FRED Pt®  
FEATURES  
• Ultrafast recovery time  
• 175 °C maximum junction temperature  
• Output rectification  
TO-247AC modified  
TO-247AC  
• Compliant to RoHS directive 2002/95/EC  
• Designed and qualified for industrial level  
Base  
common  
cathode  
2
Base  
common  
cathode  
2
BENEFITS  
• Reduced RFI and EMI  
• Higher frequency operation  
• Reduced snubbing  
• Reduced parts count  
3
1
Anode  
1
Anode  
3
Anode  
Cathode  
VS-60EPU02PbF  
VS-60APU02PbF  
DESCRIPTION/APPLICATIONS  
These diodes are optimized to reduce losses and EMI/RFI in  
high frequency power conditioning systems.  
PRODUCT SUMMARY  
Package  
TO-247AC, TO-247AC modified  
The softness of the recovery eliminates the need for a  
snubber in most applications. These devices are ideally  
suited for HF welding, power converters and other  
applications where switching losses are not significant  
portion of the total losses.  
IF(AV)  
60 A  
200 V  
VR  
VF at IF  
1.08 V  
trr (typ.)  
TJ max.  
Diode variation  
See table  
175 °C  
Single die  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VR  
TEST CONDITIONS  
VALUES  
200  
UNITS  
Cathode to anode voltage  
V
Continuous forward current  
IF(AV)  
TC = 127 °C  
60  
Single pulse forward current  
IFSM  
TC = 25 °C  
800  
A
Maximum repetitive forward current  
Operating junction and storage temperatures  
IFRM  
Square wave, 20 kHz  
120  
TJ, TStg  
- 55 to 175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
IF = 60 A  
200  
-
-
V
-
-
-
-
-
-
0.98  
0.81  
-
1.08  
0.88  
50  
2
Forward voltage  
VF  
IR  
IF = 60 A, TJ = 175 °C  
VR = VR rated  
μA  
mA  
pF  
Reverse leakage current  
TJ = 150 °C, VR = VR rated  
VR = 200 V  
-
Junction capacitance  
Series inductance  
CT  
LS  
87  
8.0  
-
Measured lead to lead 5 mm from package body  
-
nH  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 94021  
Revision: 29-Sep-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1

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