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VS-60EPU06L-N3 PDF预览

VS-60EPU06L-N3

更新时间: 2024-11-30 15:57:43
品牌 Logo 应用领域
威世 - VISHAY 超快软恢复二极管快速软恢复二极管局域网测试
页数 文件大小 规格书
7页 145K
描述
Rectifier Diode,

VS-60EPU06L-N3 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.7
应用:ULTRA FAST SOFT RECOVERY最小击穿电压:600 V
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.68 VJEDEC-95代码:TO-247AD
JESD-30 代码:R-PSFM-T2最大非重复峰值正向电流:600 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C最大输出电流:60 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT参考标准:AEC-Q101
最大重复峰值反向电压:600 V最大反向电流:50 µA
最大反向恢复时间:0.045 µs反向测试电压:600 V
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLEBase Number Matches:1

VS-60EPU06L-N3 数据手册

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VS-60EPU06L-N3  
Vishay Semiconductors  
www.vishay.com  
Ultrafast Soft Recovery Diode, 60 A FRED Pt®  
FEATURES  
Base  
cathode  
2
• Ultrafast recovery time  
• Low forward voltage drop  
• 175 °C operating junction temperature  
2
• AEC-Q101 qualified, meets JESD 201 class 1A  
whisker test  
1
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
3
1
3
TO-247AD 2L  
Cathode  
Anode  
BENEFITS  
• Reduced RFI and EMI  
• Higher frequency operation  
• Reduced snubbing  
• Reduced parts count  
PRIMARY CHARACTERISTICS  
IF(AV)  
60 A  
600 V  
1.11 V  
VR  
VF at IF  
DESCRIPTION / APPLICATIONS  
t
rr typ.  
See Recovery table  
175 °C  
These diodes are optimized to reduce losses and EMI/RFI in  
high frequency power conditioning systems.  
TJ max.  
Package  
The softness of the recovery eliminates the need for a  
snubber in most applications. These devices are ideally  
suited for HF welding, power converters and other  
applications where switching losses are not significant  
portion of the total losses.  
TO-247AD 2L  
Single  
Circuit configuration  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VR  
TEST CONDITIONS  
MAX.  
600  
UNITS  
Cathode to anode voltage  
V
Continuous forward current  
IF(AV)  
TC = 116 °C  
60  
Single pulse forward current  
IFSM  
TC = 25 °C  
600  
A
Maximum repetitive forward current  
Operating junction and storage temperatures  
IFRM  
Square wave, 20 kHz  
120  
TJ, TStg  
-55 to +175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
600  
-
-
IF = 60 A  
-
-
-
-
-
-
1.35  
1.20  
1.11  
-
1.68  
1.42  
1.30  
50  
V
Forward voltage  
VF  
IF = 60 A, TJ = 125 °C  
IF = 60 A, TJ = 175 °C  
VR = VR rated  
Reverse leakage current  
Junction capacitance  
IR  
μA  
pF  
TJ = 150 °C, VR = VR rated  
VR = 600 V  
-
500  
-
CT  
39  
Revision: 09-Jul-2019  
Document Number: 96628  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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