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VS-60EPU04-N3 PDF预览

VS-60EPU04-N3

更新时间: 2024-11-30 14:31:39
品牌 Logo 应用领域
威世 - VISHAY 超快软恢复二极管快速软恢复二极管局域网
页数 文件大小 规格书
9页 190K
描述
Rectifier Diode, 1 Phase, 1 Element, 60A, 400V V(RRM), Silicon, MODIFIED TO-247AC, 2 PIN

VS-60EPU04-N3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:TO-247AC, 2 PIN
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80Factory Lead Time:22 weeks
风险等级:5.7应用:ULTRA FAST SOFT RECOVERY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.25 VJESD-30 代码:R-PSFM-T2
JESD-609代码:e3最大非重复峰值正向电流:600 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C最大输出电流:60 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:400 V最大反向电流:50 µA
最大反向恢复时间:0.06 µs表面贴装:NO
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

VS-60EPU04-N3 数据手册

 浏览型号VS-60EPU04-N3的Datasheet PDF文件第2页浏览型号VS-60EPU04-N3的Datasheet PDF文件第3页浏览型号VS-60EPU04-N3的Datasheet PDF文件第4页浏览型号VS-60EPU04-N3的Datasheet PDF文件第5页浏览型号VS-60EPU04-N3的Datasheet PDF文件第6页浏览型号VS-60EPU04-N3的Datasheet PDF文件第7页 
VS-60EPU04PbF, VS-60EPU04-N3, VS-60APU04PbF,  
www.vishay.com  
Vishay Semiconductors  
Ultrafast Soft Recovery Diode, 60 A FRED Pt®  
FEATURES  
• Ultrafast recovery time  
• Low forward voltage drop  
• 175 °C operating junction temperature  
• Designed and qualified according to  
JEDEC®-JESD 47  
TO-247AC  
TO-247AC modified  
• Material categorization:  
for definitions of compliance please see  
Cathode  
to base  
Cathode  
to base  
Available  
www.vishay.com/doc?99912  
2
2
BENEFITS  
• Reduced RFI and EMI  
• Higher frequency operation  
• Reduced snubbing  
• Reduced parts count  
3
3
1
1
Anode  
Cathode  
Anode  
Anode  
VS-60EPU04PbF  
VS-60EPU04-N3  
VS-60APU04PbF  
VS-60APU04-N3  
DESCRIPTION / APPLICATIONS  
PRODUCT SUMMARY  
TO-247AC modified (2 pins),  
TO-247AC  
These diodes are optimized to reduce losses and EMI/RFI in  
high frequency power conditioning systems.  
Package  
IF(AV)  
VR  
60 A  
400 V  
The softness of the recovery eliminates the need for a  
snubber in most applications. These devices are ideally  
suited for HF welding, power converters and other  
applications where switching losses are not significant  
portion of the total losses.  
VF at IF  
0.87 V  
t
rr typ.  
See Recovery table  
175 °C  
TJ max.  
Diode variation  
Single die  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VR  
TEST CONDITIONS  
VALUES  
400  
UNITS  
Cathode to anode voltage  
V
Continuous forward current  
IF(AV)  
TC = 127 °C  
60  
Single pulse forward current  
IFSM  
TC = 25 °C  
600  
A
Maximum repetitive forward current  
Operating junction and storage temperatures  
IFRM  
Square wave, 20 kHz  
120  
TJ, TStg  
-55 to +175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
IF = 60 A  
400  
-
-
-
-
-
-
-
-
-
1.05  
0.87  
0.93  
-
1.25  
1.03  
1.10  
50  
2
V
Forward voltage  
VF  
IF = 60 A, TJ = 175 °C  
IF = 60 A, TJ = 125 °C  
VR = VR rated  
μA  
mA  
pF  
Reverse leakage current  
IR  
TJ = 150 °C, VR = VR rated  
VR = 400 V  
-
Junction capacitance  
Series inductance  
CT  
LS  
50  
-
Measured lead to lead 5 mm from package body  
3.5  
-
nH  
Revision: 09-Jul-15  
Document Number: 94022  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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