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VS-5EWH06FNTRRHM3 PDF预览

VS-5EWH06FNTRRHM3

更新时间： 2024-09-19 01:08:23
品牌 Logo 应用领域
威世 - VISHAY 软恢复二极管超快速软恢复二极管
页数 文件大小 规格书
6页 122K
描述
Hyperfast Rectifier, 5 A FRED Pt

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VS-5EWH06FNTRRHM3 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：DPAK-3/2
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.80Factory Lead Time：22 weeks
风险等级：5.39其他特性：FREE WHEELING DIODE, LOW LEAKAGE CURRENT
应用：HYPERFAST SOFT RECOVERY外壳连接：CATHODE
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：1.85 V
JEDEC-95代码：TO-252AAJESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：1
最大非重复峰值正向电流：70 A元件数量：1
相数：1端子数量：2
最高工作温度：175 °C最低工作温度：-65 °C
最大输出电流：5 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260参考标准：AEC-Q101
最大重复峰值反向电压：600 V最大反向电流：5 µA
最大反向恢复时间：0.025 µs表面贴装：YES
端子面层：Matte Tin (Sn) - with Nickel (Ni) barrier端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：10
Base Number Matches：1

VS-5EWH06FNTRRHM3 数据手册

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VS-5EWH06FNHM3  
Vishay Semiconductors  
www.vishay.com  
Hyperfast Rectifier, 5 A FRED Pt®  
FEATURES  
• Hyperfast recovery time, reduced Qrr and soft  
recovery  
2, 4  
• 175 °C maximum operating junction temperature  
• For PFC CRM/CCM operation  
• Low forward voltage drop  
1
N/C  
3
Anode  
• Low leakage current  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
TO-252AA (D-PAK)  
• AEC-Q101 qualified  
• Meets JESD 201 class 2 whisker test  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRODUCT SUMMARY  
Package  
TO-252AA (D-PAK)  
5 A  
DESCRIPTION / APPLICATIONS  
IF(AV)  
State of the art hyperfast recovery rectifiers designed with  
optimized performance of forward voltage drop, hyperfast  
recovery time, and soft recovery.  
VR  
600 V  
VF at IF  
1.2 V  
The planar structure and the platinum doped life time  
control guarantee the best overall performance,  
ruggedness and reliability characteristics.  
These devices are intended for use in PFC boost stage in  
the AC/DC section of SMPS inverters or as freewheeling  
diodes. Their extremely optimized stored charge and low  
recovery current minimize the switching losses and reduce  
over dissipation in the switching element and snubbers.  
trr (typ.)  
TJ max.  
Diode variation  
18 ns  
175 °C  
Single die  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
IF(AV)  
TEST CONDITIONS  
VALUES  
UNITS  
Peak repetitive reverse voltage  
Average rectified forward current  
Non-repetitive peak surge current  
Peak repetitive forward current  
Operating junction and storage temperatures  
600  
V
TC = 150 °C  
5
IFSM  
TJ = 25 °C  
70  
10  
A
IFM  
TC = 150 °C, f = 20 kHz, d = 50 %  
TJ, TStg  
-65 to +175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
IF = 5 A  
600  
-
-
V
-
-
-
-
-
-
1.54  
1.20  
-
1.85  
1.40  
5
Forward voltage  
VF  
IR  
IF = 5 A, TJ = 150 °C  
VR = VR rated  
Reverse leakage current  
μA  
TJ = 150 °C, VR = VR rated  
VR = 600 V  
-
130  
-
Junction capacitance  
Series inductance  
CT  
LS  
3.5  
8
pF  
nH  
Measured lead to lead 5 mm from package body  
-
Revision: 10-Jul-15  
Document Number: 94817  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
123456

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