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VS-5EWL06FN-M3

更新时间： 2024-09-18 12:27:59
品牌 Logo 应用领域
威世 - VISHAY 整流二极管超快恢复二极管超高速恢复二极管快速恢复二极管
页数 文件大小 规格书
8页 156K
描述
Ultralow VF Ultrafast Rectifier, 5 A FRED Pt®

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中文翻译

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VS-5EWL06FN-M3 技术参数

生命周期：Active零件包装代码：TO-252AA
包装说明：R-PSSO-G2针数：3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：0.96
其他特性：FREE WHEELING DIODE, LOW LEAKAGE CURRENT应用：HYPER ULTRA FAST RECOVERY
外壳连接：CATHODE配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：1 VJEDEC-95代码：TO-252AA
JESD-30 代码：R-PSSO-G2最大非重复峰值正向电流：80 A
元件数量：1相数：1
端子数量：2最高工作温度：175 °C
最低工作温度：-65 °C最大输出电流：5 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified最大重复峰值反向电压：600 V
最大反向恢复时间：0.07 µs子类别：Rectifier Diodes
表面贴装：YES端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

VS-5EWL06FN-M3 数据手册

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New Product  
VS-5EWL06FN-M3  
Vishay Semiconductors  
Ultralow VF Ultrafast Rectifier, 5 A FRED Pt®  
FEATURES  
• Ultrafast recovery time, extremely low VF and  
soft recovery  
2, 4  
• 175 °C maximum operating junction temperature  
• For PFC DCM operation  
• Low leakage current  
1
N/C  
3
Anode  
• Compliant to RoHS Directive 2002/95/EC  
D-PAK (TO-252AA)  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
• Halogen-free according to IEC 61249-2-21 definition  
PRODUCT SUMMARY  
DESCRIPTION/APPLICATIONS  
Package  
D-PAK (TO-252AA)  
5 A  
State of the art hyperfast recovery rectifiers designed with  
optimized performance of forward voltage drop, hyperfast  
recovery time, and soft recovery.  
The planar structure and the platinum doped life time  
control guarantee the best overall performance, ruggedness  
and reliability characteristics.  
These devices are intended for use in PFC boost stage in the  
AC/DC section of SMPS inverters or as freewheeling diodes.  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce  
over dissipation in the switching element and snubbers.  
IF(AV)  
VR  
600 V  
VF at IF  
1.20 V  
trr (typ.)  
TJ max.  
Diode variation  
59 ns  
175 °C  
Single die  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
IF(AV)  
TEST CONDITIONS  
VALUES  
UNITS  
Peak repetitive reverse voltage  
Average rectified forward current  
Non-repetitive peak surge current  
Peak repetitive forward current  
Operating junction and storage temperatures  
600  
V
TC = 159 °C  
5
80  
IFSM  
TJ = 25 °C  
A
IFM  
TC = 159 °C, f = 20 kHz, d = 50 %  
10  
TJ, TStg  
- 65 to 175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
IF = 5 A  
600  
-
-
V
-
-
-
-
-
-
0.97  
0.85  
-
1.20  
1.0  
5
Forward voltage  
VF  
IR  
IF = 5 A, TJ = 150 °C  
VR = VR rated  
Reverse leakage current  
μA  
TJ = 150 °C, VR = VR rated  
VR = 600 V  
-
125  
-
Junction capacitance  
Series inductance  
CT  
LS  
3.5  
8
pF  
nH  
Measured lead to lead 5 mm from package body  
-
Document Number: 93250  
Revision: 31-Mar-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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中文翻译

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VS-5EWL06FN-M3 替代型号

型号 品牌 替代类型 描述 数据表
VS-5EWL06FNTR-M3 VISHAY

完全替代

 DIODE 5 A, 600 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLA

与VS-5EWL06FN-M3相关器件

型号 品牌 获取价格 描述 数据表
VS-5EWL06FNTR-M3 VISHAY

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 		DIODE 5 A, 600 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLA
VS-5EWX06FN-M3 VISHAY

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 		Hyperfast Rectifier, 5 A FRED Pt?
VS-5EWX06FNTRL-M3 VISHAY

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 		DIODE 5 A, 600 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLA
VS-5EWX06FNTR-M3 VISHAY

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 		DIODE 5 A, 600 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLA
VS-5EWX06FNTRR-M3 VISHAY

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 		DIODE 5 A, 600 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLA
VS-5MB-IM2 FUJITSU

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 		Power/Signal Relay, POWER/SIGNAL RELAY, SPST, MOMENTARY, 0.14A (COIL), 5VDC (COIL), 700mW
VS-5MB-NR-SM2 FUJITSU

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 		Power/Signal Relay, POWER/SIGNAL RELAY, SPST, MOMENTARY, 0.138A (COIL), 5VDC (COIL), 700mW
VS-5MB-N-SM2 FUJITSU

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 		Power/Signal Relay, POWER/SIGNAL RELAY, SPST, MOMENTARY, 0.14A (COIL), 5VDC (COIL), 700mW
VS-5MB-N-UC FUJITSU

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 		Power/Signal Relay, POWER/SIGNAL RELAY, SPST, MOMENTARY, 0.14A (COIL), 5VDC (COIL), 700mW
VS-5MB-SM2 FUJITSU

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 		Power/Signal Relay, POWER/SIGNAL RELAY, SPST, MOMENTARY, 0.14A (COIL), 5VDC (COIL), 700mW

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