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VS-5EWX06FN-M3

更新时间： 2024-11-26 14:54:55
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 151K
描述
Hyperfast Rectifier, 5 A FRED Pt?

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VS-5EWX06FN-M3 数据手册

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VS-5EWX06FN-M3  
Vishay Semiconductors  
www.vishay.com  
Hyperfast Rectifier, 5 A FRED Pt®  
FEATURES  
• Hyperfast recovery time, extremely low Qrr  
• 175 °C maximum operating junction temperature  
• For PFC CCM operation  
2, 4  
• Low forward voltage drop  
• Low leakage current  
1
N/C  
3
Anode  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
DPAK (TO-252AA)  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
DESCRIPTION / APPLICATIONS  
PRIMARY CHARACTERISTICS  
State of the art hyperfast recovery rectifiers designed with  
optimized performance of forward voltage drop, hyperfast  
recovery time, and soft recovery.  
IF(AV)  
5 A  
VR  
600 V  
1.55 V  
14 ns  
VF at IF  
trr (typ.)  
TJ max.  
The planar structure and the platinum doped life time control  
guarantee the best overall performance, ruggedness and  
reliability characteristics.  
175 °C  
Package  
DPAK (TO-252AA)  
Single  
These devices are intended for use in PFC boost stage in the  
AC/DC section of SMPS inverters or as freewheeling diodes.  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce  
over dissipation in the switching element and snubbers.  
Circuit configuration  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
IF(AV)  
TEST CONDITIONS  
TC = 144 °C  
VALUES  
UNITS  
Peak repetitive reverse voltage  
Average rectified forward current  
Non-repetitive peak surge current  
Peak repetitive forward current  
Operating junction and storage temperatures  
600  
V
5
IFSM  
TJ = 25 °C  
50  
10  
A
IFM  
TC = 144 °C, f = 20 kHz, d = 50 %  
TJ, TStg  
-65 to +175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
IF = 5 A  
600  
-
-
V
-
-
-
-
-
-
2.39  
1.55  
-
2.9  
1.8  
20  
250  
-
Forward voltage  
VF  
IR  
IF = 5 A, TJ = 150 °C  
VR = VR rated  
Reverse leakage current  
μA  
TJ = 150 °C, VR = VR rated  
VR = 600 V  
-
Junction capacitance  
Series inductance  
CT  
LS  
3.5  
8
pF  
nH  
Measured lead to lead 5 mm from package body  
-
Revision: 05-Jun-2023  
Document Number: 93248  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567

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VS-5EWX06FN-M3 替代型号

型号 品牌 替代类型 描述 数据表
VS-5EWX06FNTR-M3 VISHAY

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 DIODE 5 A, 600 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLA
VS-5EWX06FNTRR-M3 VISHAY

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 DIODE 5 A, 600 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLA

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VS-5EWX06FNTRL-M3 VISHAY

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 		DIODE 5 A, 600 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLA
VS-5MB-IM2 FUJITSU

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 		Power/Signal Relay, POWER/SIGNAL RELAY, SPST, MOMENTARY, 0.14A (COIL), 5VDC (COIL), 700mW
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 		Power/Signal Relay, POWER/SIGNAL RELAY, SPST, MOMENTARY, 0.14A (COIL), 5VDC (COIL), 700mW
VS-5MBU-5-SM2 FUJITSU

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 		Power/Signal Relay, POWER/SIGNAL RELAY, SPST, MOMENTARY, 0.14A (COIL), 5VDC (COIL), 700mW

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