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VS-50WQ03FNTRR-M3 PDF预览

VS-50WQ03FNTRR-M3

更新时间： 2024-11-08 15:57:43
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
7页 144K
描述
DIODE 30 V, SILICON, RECTIFIER DIODE, HALOGEN FREE AND ROHS COMPLIANT, SIMILAR TO TO-252AA, DPAK-3, Rectifier Diode

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VS-50WQ03FNTRR-M3 技术参数

生命周期：Active零件包装代码：TO-252AA
包装说明：R-PSSO-G2针数：3
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.69其他特性：FREE WHEELING DIODE, HIGH RELIABILITY
应用：GENERAL PURPOSE外壳连接：CATHODE
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：0.35 V
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值正向电流：320 A
元件数量：1相数：1
端子数量：2最高工作温度：150 °C
最大输出电流：5.5 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260认证状态：Not Qualified
最大重复峰值反向电压：30 V子类别：Rectifier Diodes
表面贴装：YES技术：SCHOTTKY
端子面层：Matte Tin (Sn)端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：40
Base Number Matches：1

VS-50WQ03FNTRR-M3 数据手册

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VS-50WQ03FN-M3  
Vishay Semiconductors  
www.vishay.com  
High Performance Schottky Rectifier, 5.5 A  
FEATURES  
• Low forward voltage drop  
Base  
cathode  
4, 2  
• Guard ring for enhanced ruggedness and long  
term reliability  
• Popular D-PAK outline  
1
3
• Small foot print, surface mountable  
• High frequency operation  
D-PAK (TO-252AA)  
Anode  
Anode  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
PRODUCT SUMMARY  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
Package  
D-PAK (TO-252AA)  
5.5 A  
IF(AV)  
DESCRIPTION  
VR  
30 V  
The VS-50WQ03FN-M3 surface mount Schottky rectifier  
has been designed for applications requiring low forward  
drop and small foot prints on PC board. Typical applications  
are in disk drives, switching power supplies, converters,  
freewheeling diodes, battery charging, and reverse battery  
protection.  
VF at IF  
IRM  
See Electrical table  
58 mA at 125 °C  
150 °C  
TJ max.  
Diode variation  
EAS  
Single die  
10 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
5.5  
UNITS  
Rectangular waveform  
A
V
30  
tp = 5 μs sine  
5 Apk, TJ = 125 °C  
Range  
320  
A
VF  
0.35  
V
TJ  
-40 to +150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VS-50WQ03FN-M3  
UNITS  
Maximum DC reverse voltage  
VR  
30  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TC = 136 °C, rectangular waveform  
VALUES  
UNITS  
Maximum average forward current  
See fig. 5  
IF(AV)  
5.5  
A
Following any rated  
load condition and with  
rated VRRM applied  
5 μs sine or 3 μs rect. pulse  
320  
Maximum peak one cycle  
non-repetitive surge current  
See fig. 7  
IFSM  
A
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 2 A, L = 5 mH  
130  
10  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
2.0  
Revision: 22-Nov-16  
Document Number: 93311  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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VS-50WQ03FNTRR-M3 替代型号

型号 品牌 替代类型 描述 数据表
VS-50WQ03FN-M3 VISHAY

完全替代

 DIODE 30 V, SILICON, RECTIFIER DIODE, HALOGEN FREE AND ROHS COMPLIANT, SIMILAR TO TO-252AA
VS-50WQ03FNTRRPBF VISHAY

完全替代

 DIODE 30 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, PLASTIC, SIMILAR TO TO-252AA, DPAK-3
50WQ03FNTRR VISHAY

完全替代

 Schottky Rectifier, 5.5 A

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 		DIODE 40 V, SILICON, RECTIFIER DIODE, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SIMILAR TO
VS-50WQ04FNTRRHM3 VISHAY

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 		Rectifier Diode, Schottky, 1 Phase, 1 Element, 40V V(RRM), Silicon, TO-252AA, DPAK-3/2
VS-50WQ04FNTRR-M3 VISHAY

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 		Small foot print, surface mountable
VS-50WQ04FNTRRPBF VISHAY

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 		DIODE 40 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, PLASTIC, SIMILAR TO TO-252AA, DPAK-3

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