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VS-50WQ04FNTRHM3

更新时间: 2024-11-08 19:53:23
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
6页 115K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 40V V(RRM), Silicon, TO-252AA, DPAK-3/2

VS-50WQ04FNTRHM3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PSSO-G2
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.7其他特性:FREE WHEELING DIODE
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.63 V
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:90 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
参考标准:AEC-Q101最大重复峰值反向电压:40 V
最大反向电流:3000 µA表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:10Base Number Matches:1

VS-50WQ04FNTRHM3 数据手册

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VS-50WQ04FNHM3  
Vishay Semiconductors  
www.vishay.com  
Schottky Rectifier, 5.5 A  
FEATURES  
• Low forward voltage drop  
Base  
cathode  
4, 2  
• Guard ring for enhanced ruggedness and long  
term reliability  
• Small foot print, surface mountable  
• High frequency operation  
• Popular D-PAK outline  
1
3
D-PAK (TO-252AA)  
Anode  
Anode  
• AEC-Q101 qualified  
• Meets JESD 201 class 2 whisker test  
PRODUCT SUMMARY  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
Package  
D-PAK (TO-252AA)  
5.5 A  
IF(AV)  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
VR  
40 V  
VF at IF  
IRM  
See Electrical table  
40 mA at 125 °C  
150 °C  
DESCRIPTION  
The VS-50WQ04FNHM3 surface mount Schottky rectifier  
has been designed for applications requiring low forward  
drop and small foot prints on PC board. Typical applications  
are in disk drives, switching power supplies, converters,  
freewheeling diodes, battery charging, and reverse battery  
protection.  
TJ max.  
Diode variation  
EAS  
Single die  
9 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
5.5  
UNITS  
Rectangular waveform  
A
V
40  
tp = 5 μs sine  
5 Apk, TJ = 125 °C  
Range  
340  
A
VF  
0.44  
V
TJ  
- 40 to 150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VS-50WQ04FNHM3  
UNITS  
Maximum DC reverse voltage  
VR  
40  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES UNITS  
Maximum average forward current   
See fig. 5  
IF(AV)  
50 % duty cycle at TC = 135 °C, rectangular waveform  
5.5  
A
Maximum peak one cycle  
non-repetitive surge current   
See fig. 7  
Following any rated load  
condition and with rated  
5 μs sine or 3 μs rect. pulse  
550  
IFSM  
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 1.5 A, L = 8 mH  
90  
V
RRM applied  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
9
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
1.2  
Revision: 21-Aug-13  
Document Number: 94728  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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