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VS-50WQ04FNTRR-M3

更新时间： 2024-09-23 01:12:11
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 142K
描述
Small foot print, surface mountable

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VS-50WQ04FNTRR-M3 数据手册

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VS-50WQ04FN-M3  
Vishay Semiconductors  
www.vishay.com  
High Performance Schottky Rectifier, 5.5 A  
FEATURES  
• Low forward voltage drop  
Base  
cathode  
4, 2  
• Guard ring for enhanced ruggedness and long  
term reliability  
• Small foot print, surface mountable  
• High frequency operation  
• Popular D-PAK outline  
1
3
Anode  
Anode  
D-PAK (TO-252AA)  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRODUCT SUMMARY  
Package  
D-PAK (TO-252AA)  
5.5 A  
IF(AV)  
VR  
40 V  
DESCRIPTION  
VF at IF  
IRM  
See Electrical table  
40 mA at 125 °C  
150 °C  
The VS-50WQ04FN-M3 surface mount Schottky rectifier  
has been designed for applications requiring low forward  
drop and small foot prints on PC board. Typical applications  
are in disk drives, switching power supplies, converters,  
freewheeling diodes, battery charging, and reverse battery  
protection.  
TJ max.  
Diode variation  
EAS  
Single die  
9 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
5.5  
UNITS  
Rectangular waveform  
A
V
40  
tp = 5 μs sine  
5 Apk, TJ = 125 °C  
Range  
340  
A
VF  
0.44  
V
TJ  
-40 to +150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VS-50WQ04FN-M3  
UNITS  
Maximum DC reverse voltage  
VR  
40  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES UNITS  
Maximum average forward current   
See fig. 5  
IF(AV)  
50 % duty cycle at TC = 135 °C, rectangular waveform  
5.5  
A
Maximum peak one cycle  
non-repetitive surge current   
See fig. 7  
Following any rated load  
condition and with rated  
5 μs sine or 3 μs rect. pulse  
550  
IFSM  
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 1.5 A, L = 8 mH  
90  
V
RRM applied  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
9
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
1.2  
Revision: 22-Nov-16  
Document Number: 93312  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567

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VS-50WQ04FNTRR-M3 替代型号

型号 品牌 替代类型 描述 数据表
VS-50WQ04FN-M3 VISHAY

完全替代

 Small foot print, surface mountable
VS-50WQ04FNTRRPBF VISHAY

完全替代

 DIODE 40 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, PLASTIC, SIMILAR TO TO-252AA, DPAK-3
50WQ04FNTRR VISHAY

完全替代

 Schottky Rectifier, 5.5 A

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VS-50WQ04FNTRRPBF VISHAY

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 		DIODE 40 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, PLASTIC, SIMILAR TO TO-252AA, DPAK-3
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 		Rectifier Diode, Schottky, 1 Phase, 1 Element, 60V V(RRM), Silicon, TO-252AA, HALOGEN FREE
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 		DIODE 60 V, SILICON, RECTIFIER DIODE, HALOGEN FREE AND ROHS COMPLIANT, SIMILAR TO TO-252AA
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 		Rectifier Diode, Schottky, 1 Phase, 1 Element, 60V V(RRM), Silicon, TO-252AA, HALOGEN FREE
VS-50WQ06FNTRLHM3 VISHAY

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 		Schottky Rectifier, 5.5 A
VS-50WQ06FNTRL-M3 VISHAY

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 		DIODE 60 V, SILICON, RECTIFIER DIODE, HALOGEN FREE AND ROHS COMPLIANT, SIMILAR TO TO-252AA
VS-50WQ06FNTR-M3 VISHAY

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 		DIODE 60 V, SILICON, RECTIFIER DIODE, HALOGEN FREE AND ROHS COMPLIANT, SIMILAR TO TO-252AA
VS-50WQ06FNTRPBF VISHAY

获取价格

 		DIODE 60 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, PLASTIC, SIMILAR TO TO-252AA, DPAK-3
VS-50WQ06FNTRRHM3 VISHAY

获取价格

 		Schottky Rectifier, 5.5 A
VS-50WQ06FNTRRPBF VISHAY

获取价格

 		DIODE 60 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, PLASTIC, SIMILAR TO TO-252AA, DPAK-3

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