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VS-50WQ10FNTR-M3 PDF预览

VS-50WQ10FNTR-M3

更新时间: 2024-09-22 15:57:43
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
7页 153K
描述
DIODE 100 V, SILICON, RECTIFIER DIODE, HALOGEN FREE AND ROHS COMPLIANT, SIMILAR TO TO-252AA, DPAK-3, Rectifier Diode

VS-50WQ10FNTR-M3 技术参数

生命周期:Active零件包装代码:TO-252AA
包装说明:R-PSSO-G2针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:1.66其他特性:FREE WHEELING DIODE, HIGH RELIABLITY
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.63 V
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:330 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:5.5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:100 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:40Base Number Matches:1

VS-50WQ10FNTR-M3 数据手册

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VS-50WQ10FN-M3  
Vishay Semiconductors  
www.vishay.com  
High Performance Schottky Rectifier, 5.5 A  
FEATURES  
Base  
cathode  
• Low forward voltage drop  
4, 2  
• Guard ring for enhanced ruggedness and long  
term reliability  
• Popular D-PAK outline  
1
3
• Small foot print, surface mountable  
• High frequency operation  
Anode  
Anode  
D-PAK (TO-252AA)  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
PRODUCT SUMMARY  
Package  
D-PAK (TO-252AA)  
5.5 A  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
IF(AV)  
VR  
100 V  
DESCRIPTION  
VF at IF  
IRM  
See Electrical table  
4 mA at 125 °C  
150 °C  
The VS-50WQ10FN-M3 surface mount Schottky rectifier  
has been designed for applications requiring low forward  
drop and small foot prints on PC board. Typical applications  
are in disk drives, switching power supplies, converters,  
freewheeling diodes, battery charging, and reverse battery  
protection.  
TJ max.  
Diode variation  
EAS  
Single die  
6 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
5.5  
UNITS  
Rectangular waveform  
A
V
100  
tp = 5 μs sine  
5 Apk, TJ = 125 °C  
Range  
330  
A
VF  
0.63  
V
TJ  
-40 to +150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VS-50WQ10FN-M3  
UNITS  
Maximum DC reverse voltage  
VR  
100  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TC = 135 °C, rectangular waveform  
VALUES  
UNITS  
Maximum average forward current   
See fig. 5  
IF(AV)  
5.5  
A
Maximum peak one cycle  
non-repetitive surge current   
See fig. 7  
Following any rated load  
condition and with rated  
5 μs sine or 3 μs rect. pulse  
10 ms sine or 6 ms rect. pulse  
330  
IFSM  
110  
6.0  
VRRM applied  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
TJ = 25 °C, IAS = 0.5 A, L = 40 mH  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
0.5  
Revision: 22-Nov-16  
Document Number: 93314  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

VS-50WQ10FNTR-M3 替代型号

型号 品牌 替代类型 描述 数据表
VS-50WQ10FNPBF VISHAY

完全替代

DIODE 100 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, PLASTIC, SIMILAR TO TO-252AA, DPAK-
VS-50WQ10FNTRR-M3 VISHAY

完全替代

DIODE 100 V, SILICON, RECTIFIER DIODE, HALOGEN FREE AND ROHS COMPLIANT, SIMILAR TO TO-252A
VS-50WQ10FN-M3 VISHAY

完全替代

DIODE 100 V, SILICON, RECTIFIER DIODE, HALOGEN FREE AND ROHS COMPLIANT, SIMILAR TO TO-252A

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