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VS-50WQ10FNHM3

更新时间： 2024-09-23 01:19:55
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 120K
描述
Small foot print, surface mountable

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VS-50WQ10FNHM3 数据手册

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VS-50WQ10FNHM3  
Vishay Semiconductors  
www.vishay.com  
Schottky Rectifier, 5.5 A  
FEATURES  
Base  
cathode  
• Low forward voltage drop  
4, 2  
• Guard ring for enhanced ruggedness and  
long term reliability  
• Popular D-PAK outline  
1
3
• Small foot print, surface mountable  
• High frequency operation  
• AEC-Q101 qualified  
D-PAK (TO-252AA)  
Anode  
Anode  
• Meets JESD 201 class 2 whisker test  
PRODUCT SUMMARY  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
Package  
D-PAK (TO-252AA)  
5.5 A  
IF(AV)  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
VR  
100 V  
VF at IF  
IRM  
See Electrical table  
4 mA at 125 °C  
150 °C  
DESCRIPTION  
The VS-50WQ10FNHM3 surface mount Schottky rectifier  
has been designed for applications requiring low forward  
drop and small foot prints on PC board. Typical applications  
are in disk drives, switching power supplies, converters,  
freewheeling diodes, battery charging, and reverse battery  
protection.  
TJ max.  
Diode variation  
EAS  
Single die  
6 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
5.5  
UNITS  
Rectangular waveform  
A
V
100  
tp = 5 μs sine  
5 Apk, TJ = 125 °C  
Range  
330  
A
VF  
0.63  
V
TJ  
- 40 to 150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
VS-50WQ10FNHM3  
UNITS  
Maximum DC reverse voltage  
100  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TC = 135 °C, rectangular waveform  
VALUES  
UNITS  
Maximum average forward current   
See fig. 5  
IF(AV)  
5.5  
A
Maximum peak one cycle  
non-repetitive surge current   
See fig. 7  
Following any rated load  
condition and with rated  
5 μs sine or 3 μs rect. pulse  
10 ms sine or 6 ms rect. pulse  
330  
IFSM  
110  
6.0  
VRRM applied  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
TJ = 25 °C, IAS = 0.5 A, L = 40 mH  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
0.5  
Revision: 21-Aug-13  
Document Number: 94730  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
123456

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VS-50WQ10FNTRLHM3 VISHAY

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 		Small foot print, surface mountable
VS-50WQ10FNTRL-M3 VISHAY

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 		DIODE 100 V, SILICON, RECTIFIER DIODE, HALOGEN FREE AND ROHS COMPLIANT, SIMILAR TO TO-252A
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VS-50WQ10FNTR-M3 VISHAY

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 		DIODE 100 V, SILICON, RECTIFIER DIODE, HALOGEN FREE AND ROHS COMPLIANT, SIMILAR TO TO-252A
VS-50WQ10FNTRPBF VISHAY

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 		Schottky Rectifier, 5.5 A
VS-50WQ10FNTRRHM3 VISHAY

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 		Rectifier Diode, Schottky, 1 Phase, 1 Element, 100V V(RRM), Silicon, TO-252AA, DPAK-3/2
VS-50WQ10FNTRR-M3 VISHAY

获取价格

 		DIODE 100 V, SILICON, RECTIFIER DIODE, HALOGEN FREE AND ROHS COMPLIANT, SIMILAR TO TO-252A

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