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VS-50WQ03FNTRHM3

更新时间： 2024-11-08 19:50:43
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
6页 115K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 30V V(RRM), Silicon, TO-252AA, DPAK-3/2

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VS-50WQ03FNTRHM3 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：R-PSSO-G2Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.72
其他特性：FREE WHEELING DIODE应用：GENERAL PURPOSE
外壳连接：CATHODE配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：0.53 VJEDEC-95代码：TO-252AA
JESD-30 代码：R-PSSO-G2湿度敏感等级：1
最大非重复峰值正向电流：130 A元件数量：1
相数：1端子数量：2
最高工作温度：150 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
参考标准：AEC-Q101最大重复峰值反向电压：30 V
最大反向电流：3000 µA表面贴装：YES
技术：SCHOTTKY端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

VS-50WQ03FNTRHM3 数据手册

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VS-50WQ03FNHM3  
Vishay Semiconductors  
www.vishay.com  
High Performance Schottky Rectifier, 5.5 A  
FEATURES  
• Low forward voltage drop  
Base  
cathode  
4, 2  
• Guard ring for enhanced ruggedness and long  
term reliability  
• Popular D-PAK outline  
1
3
• Small foot print, surface mountable  
• High frequency operation  
D-PAK (TO-252AA)  
Anode  
Anode  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
PRODUCT SUMMARY  
Package  
D-PAK (TO-252AA)  
5.5 A  
• AEC-Q101 qualified, meets JESD 201 class 2 whisker test  
IF(AV)  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
VR  
30 V  
VF at IF  
IRM  
See Electrical table  
58 mA at 125 °C  
150 °C  
DESCRIPTION  
The VS-50WQ03FNHM3 surface mount Schottky rectifier  
has been designed for applications requiring low forward  
drop and small foot prints on PC board. Typical applications  
are in disk drives, switching power supplies, converters,  
freewheeling diodes, battery charging, and reverse battery  
protection.  
TJ max.  
Diode variation  
EAS  
Single die  
10 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
5.5  
UNITS  
Rectangular waveform  
A
V
30  
tp = 5 μs sine  
5 Apk, TJ = 125 °C  
Range  
320  
A
VF  
0.35  
V
TJ  
-40 to +150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
VS-50WQ03FNHM3  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
30  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum average forward current  
See fig. 5  
IF(AV)  
50 % duty cycle at TC = 136 °C, rectangular waveform  
5.5  
A
Following any rated  
load condition and with  
rated VRRM applied  
5 μs sine or 3 μs rect. pulse  
320  
Maximum peak one cycle  
non-repetitive surge current  
See fig. 7  
IFSM  
A
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 2 A, L = 5 mH  
130  
10  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
2.0  
Revision: 02-Mar-15  
Document Number: 95860  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
123456

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与VS-50WQ03FNTRHM3相关器件

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VS-50WQ03FNTRRHM3 VISHAY

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 		Rectifier Diode, Schottky, 1 Phase, 1 Element, 30V V(RRM), Silicon, TO-252AA, DPAK-3/2
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 		DIODE 30 V, SILICON, RECTIFIER DIODE, HALOGEN FREE AND ROHS COMPLIANT, SIMILAR TO TO-252AA
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 		DIODE 30 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, PLASTIC, SIMILAR TO TO-252AA, DPAK-3
VS-50WQ04FNHM3 VISHAY

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 		Rectifier Diode, Schottky, 1 Phase, 1 Element, 40V V(RRM), Silicon, TO-252AA, DPAK-3/2
VS-50WQ04FN-M3 VISHAY

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 		Small foot print, surface mountable
VS-50WQ04FNPBF VISHAY

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 		Schottky Rectifier, 5.5 A

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