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VS-20TQ035SHM3 PDF预览

VS-20TQ035SHM3

更新时间: 2024-11-15 02:50:43
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威世 - VISHAY /
页数 文件大小 规格书
7页 165K
描述
High Performance Schottky Rectifier, 20 A

VS-20TQ035SHM3 数据手册

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VS-20TQ035SHM3, VS-20TQ040SHM3, VS-20TQ045SHM3  
www.vishay.com  
Vishay Semiconductors  
High Performance Schottky Rectifier, 20 A  
FEATURES  
Base  
cathode  
• 150 °C TJ operation  
• Low forward voltage drop  
• High frequency operation  
2
• High  
purity,  
high  
temperature  
epoxy  
encapsulation for enhanced mechanical strength and  
moisture resistance  
1
3
N/C  
Anode  
• Guard ring for enhanced ruggedness and long term  
reliability  
D2PAK (TO-263AB)  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 245 °C  
PRIMARY CHARACTERISTICS  
• Meets JESD 201 class 1A whisker test  
• AEC-Q101 qualified  
IF(AV)  
20 A  
VR  
35 V, 40 V, 45 V  
0.51 V  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
VF at IF  
I
RMtyp.  
105 mA at 125 °C  
150 °C  
TJ max.  
EAS  
DESCRIPTION  
27 mJ  
The VS-20TQ... Schottky rectifier series has been optimized  
for very low forward voltage drop, with moderate leakage.  
The proprietary barrier technology allows for reliable  
operation up to 150 °C junction temperature. Typical  
applications are in switching power supplies, converters,  
freewheeling diodes, and reverse battery protection.  
Package  
D2PAK (TO-263AB)  
Circuit configuration  
Single  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
CHARACTERISTICS  
Rectangular waveform  
Range  
VALUES  
20  
UNITS  
IF(AV)  
VRRM  
IFSM  
VF  
A
V
35 to 45  
1800  
tp = 5 μs sine  
20 Apk, TJ = 125 °C  
Range  
A
0.51  
V
TJ  
-55 to +150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL VS-20TQ035SHM3  
VS-20TQ040SHM3  
VS-20TQ045SHM3  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
VR  
35  
40  
45  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TC = 116 °C, rectangular waveform  
VALUES  
UNITS  
Maximum average forward current,  
see fig. 5  
IF(AV)  
20  
A
5 μs sine or 3 μs rect. pulse  
10 ms sine or 6 ms rect. pulse  
Following any rated load  
condition and with rated  
1800  
400  
27  
Maximum peak one cycle non-repetitive  
surge current, see fig. 7  
IFSM  
VRRM applied  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
TJ = 25 °C, IAS = 4 A, L = 3.40 mH  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
4
Revision: 28-Jul-2020  
Document Number: 96309  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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