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VS-20TQ045STRLPBF PDF预览

VS-20TQ045STRLPBF

更新时间: 2024-11-14 15:57:39
品牌 Logo 应用领域
威世 - VISHAY 高功率电源二极管
页数 文件大小 规格书
8页 266K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 20A, 45V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3

VS-20TQ045STRLPBF 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:TO-263
包装说明:R-PSSO-G2针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.81Is Samacsys:N
其他特性:FREEWHEELING DIODE, HIGH RELIABILITY应用:HIGH POWER
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.51 VJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:1800 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:20 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:45 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:MATTE TIN OVER NICKEL端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:10
Base Number Matches:1

VS-20TQ045STRLPBF 数据手册

 浏览型号VS-20TQ045STRLPBF的Datasheet PDF文件第2页浏览型号VS-20TQ045STRLPBF的Datasheet PDF文件第3页浏览型号VS-20TQ045STRLPBF的Datasheet PDF文件第4页浏览型号VS-20TQ045STRLPBF的Datasheet PDF文件第5页浏览型号VS-20TQ045STRLPBF的Datasheet PDF文件第6页浏览型号VS-20TQ045STRLPBF的Datasheet PDF文件第7页 
VS-20TQ035SPbF, VS-20TQ040SPbF, VS-20TQ045SPbF  
www.vishay.com  
Vishay Semiconductors  
High Performance Schottky Rectifier, 20 A  
FEATURES  
Base  
cathode  
• 150 °C TJ operation  
• Low forward voltage drop  
• High frequency operation  
2
• High  
purity,  
high  
temperature  
epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
1
N/C  
3
TO-263AB (D2PAK)  
Anode  
• Guard ring for enhanced ruggedness and long  
term reliability  
PRODUCT SUMMARY  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
Package  
TO-263AB (D2PAK)  
20 A  
IF(AV)  
• AEC-Q101 qualified  
VR  
35 V, 40 V, 45 V  
0.51 V  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
VF at IF  
IRM  
105 mA at 125 °C  
150 °C  
DESCRIPTION  
TJ max.  
Diode variation  
EAS  
The VS-20TQ... Schottky rectifier series has been optimized  
for very low forward voltage drop, with moderate leakage.  
The proprietary barrier technology allows for reliable  
operation up to 150 °C junction temperature. Typical  
applications are in switching power supplies, converters,  
freewheeling diodes, and reverse battery protection.  
Single die  
27 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
Rectangular waveform  
Range  
VALUES  
20  
UNITS  
A
V
35 to 45  
1800  
tp = 5 μs sine  
A
VF  
20 Apk, TJ = 125 °C  
Range  
0.51  
V
TJ  
-55 to +150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
VS-20TQ035SPbF  
35  
VS-20TQ040SPbF  
VS-20TQ045SPbF  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
40  
45  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum average forward current,  
see fig. 5  
IF(AV)  
50 % duty cycle at TC = 116 °C, rectangular waveform  
20  
A
Following any rated load  
condition and with rated  
5 μs sine or 3 μs rect. pulse  
10 ms sine or 6 ms rect. pulse  
1800  
400  
27  
Maximum peak one cycle non-repetitive  
surge current, see fig. 7  
IFSM  
EAS  
IAR  
VRRM applied  
Non-repetitive avalanche energy  
Repetitive avalanche current  
TJ = 25 °C, IAS = 4 A, L = 3.40 mH  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
4
Revision: 08-Dec-14  
Document Number: 94168  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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