Datasheet > VS-20TQ0PBF

VS-20TQ0PBF

更新时间： 2024-11-15 01:11:19

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	169K
描述
Schottky Rectifier, 20 A

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中文翻译

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数据手册

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VS-20TQ0PBF 数据手册

VS-20TQ0..PbF Series, VS-20TQ0..-N3

www.vishay.com

Vishay Semiconductors

Schottky Rectifier, 20 A

FEATURES

Base

cathode

• 150 °C T_Joperation

• Low forward voltage drop

• High frequency operation

• High

purity,

high

temperature

epoxy

encapsulation for enhanced mechanical strength

and moisture resistance

Cathode Anode

TO-220AC

• Guard ring for enhanced ruggedness and long

term reliability

• Compliant to RoHS Directive 2002/95/EC

PRODUCT SUMMARY

• Designed and qualified according to JEDEC-JESD47

Package

TO-220AC

20 A

• Halogen-free according to IEC 61249-2-21 definition

(-N3 only)

I_F(AV)

V_R

35 V, 40 V, 45 V

0.51 V

DESCRIPTION

V_Fat I_F

The VS-20TQ... Schottky rectifier series has been optimized

for very low forward voltage drop, with moderate leakage.

The proprietary barrier technology allows for reliable

operation up to 150 °C junction temperature. Typical

applications are in switching power supplies, converters,

freewheeling diodes, and reverse battery protection.

_RMmax.

T_J

105 mA at 125 °C

150 °C

Diode variation

E_AS

Single die

27 mJ

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FSM

CHARACTERISTICS

VALUES

UNITS

Rectangular waveform

Range

35 to 45

1800

t_p= 5 μs sine

20 A_pk, T_J= 125 °C

Range

V_F

0.51

T_J

- 55 to 150

°C

VOLTAGE RATINGS

VS-

PARAMETER

SYMBOL

UNITS

20TQ035PbF 20TQ035-N3 20TQ040PbF 20TQ040-N3 20TQ045PbF 20TQ045-N3

Maximum DC

reverse voltage

V_R

Maximum working

peak reverse

voltage

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES UNITS

Maximum average forward current

See fig. 5

I_F(AV)

50 % duty cycle at T_C= 116 °C, rectangular waveform

Maximum peak one cycle

non-repetitive surge current

See fig. 7

5 µs sine or 3 µs rect. pulse

1800

Following any rated load

condition and with rated

V_RRMapplied

I_FSM

10 ms sine or 6 ms rect. pulse

400

Non-repetitive avalanche energy

Repetitive avalanche current

E_AS

I_AR

T_J= 25 °C, I_AS= 4 A, L = 3.4 mH

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

Revision: 26-Aug-11

Document Number: 94167

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

中文翻译

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