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VS-21DQ04TR-M3 PDF预览

VS-21DQ04TR-M3

更新时间: 2024-11-14 12:17:07
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 121K
描述
Schottky Rectifier, 2 A

VS-21DQ04TR-M3 技术参数

生命周期:Obsolete包装说明:O-PALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.82其他特性:FREE WHEELING DIODE
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.65 V
JEDEC-95代码:DO-204ALJESD-30 代码:O-PALF-W2
最大非重复峰值正向电流:70 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM最大重复峰值反向电压:40 V
最大反向电流:500 µA表面贴装:NO
技术:SCHOTTKY端子形式:WIRE
端子位置:AXIALBase Number Matches:1

VS-21DQ04TR-M3 数据手册

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VS-21DQ04, VS-21DQ04-M3  
www.vishay.com  
Vishay Semiconductors  
Schottky Rectifier, 2 A  
FEATURES  
• Low profile, axial leaded outline  
• High frequency operation  
• Very low forward voltage drop  
Cathode  
Anode  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
DO-204AL  
• Guard ring for enhanced ruggedness and  
long term reliability  
• Compliant to RoHS Directive 2002/95/EC  
• Designed and qualified for commercial level  
PRODUCT SUMMARY  
Package  
DO-204AL (DO-41)  
2 A  
• Halogen-free according to IEC 61249-2-21 definition  
(-M3 only)  
IF(AV)  
VR  
40 V  
VF at IF  
0.5 V  
DESCRIPTION  
I
RM max.  
10 mA at 125 °C  
150 °C  
The VS-21DQ04... axial leaded Schottky rectifier has been  
optimized for very low forward voltage drop, with moderate  
leakage. Typical applications are in switching power  
supplies, converters, freewheeling diodes, and reverse  
battery protection.  
TJ max.  
Diode variation  
EAS  
Single die  
5.0 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
VF  
CHARACTERISTICS  
VALUES  
UNITS  
Rectangular waveform  
2
40  
A
V
2 Apk, TJ = 125 °C  
0.5  
TJ  
Range  
- 40 to 150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VS-21DQ04  
VS-21DQ04-M3  
40  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
VR  
40  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TC = 112 °C, rectangular waveform  
VALUES  
UNITS  
Maximum average forward current  
See fig. 4  
IF(AV)  
2
A
Maximum peak one cycle  
non-repetitive surge current  
See fig. 6  
5 µs sine or 3 µs rect. pulse  
420  
Followinganyratedload  
condition and with rated  
VRRM applied  
IFSM  
10 ms sine or 6 ms rect. pulse  
70  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
TJ = 25 °C, IAS = 1.0 A, L = 10 mH  
5.0  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
1.0  
Revision: 21-Sep-11  
Document Number: 93279  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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