Datasheet > VS-20TQ040SPBF

VS-20TQ040SPBF

更新时间： 2024-01-18 21:52:48

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	152K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 20A, 40V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3

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VS-20TQ040SPBF 数据手册

VS-20TQ035SPbF, VS-20TQ040SPbF, VS-20TQ045SPbF

www.vishay.com

Vishay Semiconductors

High Performance Schottky Rectifier, 20 A

FEATURES

Base

cathode

• 150 °C T_Joperation

• Low forward voltage drop

• High frequency operation

• High

purity,

high

temperature

epoxy

encapsulation for enhanced mechanical

strength and moisture resistance

N/C

TO-263AB (D²PAK)

Anode

• Guard ring for enhanced ruggedness and long

term reliability

PRODUCT SUMMARY

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

Package

TO-263AB (D²PAK)

20 A

I_F(AV)

• AEC-Q101 qualified

V_R

35 V, 40 V, 45 V

0.51 V

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

V_Fat I_F

I_RM

105 mA at 125 °C

150 °C

DESCRIPTION

T_Jmax.

Diode variation

E_AS

The VS-20TQ... Schottky rectifier series has been optimized

for very low forward voltage drop, with moderate leakage.

The proprietary barrier technology allows for reliable

operation up to 150 °C junction temperature. Typical

applications are in switching power supplies, converters,

freewheeling diodes, and reverse battery protection.

Single die

27 mJ

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FSM

CHARACTERISTICS

Rectangular waveform

Range

VALUES

UNITS

35 to 45

1800

t_p= 5 μs sine

V_F

20 A_pk, T_J= 125 °C

Range

0.51

T_J

-55 to +150

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

V_R

VS-20TQ035SPbF

VS-20TQ040SPbF

VS-20TQ045SPbF

UNITS

Maximum DC reverse voltage

Maximum working peak reverse voltage

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average forward current,

see fig. 5



I_F(AV)

50 % duty cycle at T_C= 116 °C, rectangular waveform

Following any rated load

condition and with rated

5 μs sine or 3 μs rect. pulse

10 ms sine or 6 ms rect. pulse

1800

400

Maximum peak one cycle non-repetitive

surge current, see fig. 7

I_FSM

E_AS

I_AR

V_RRMapplied

Non-repetitive avalanche energy

Repetitive avalanche current

T_J= 25 °C, I_AS= 4 A, L = 3.40 mH

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

Revision: 08-Dec-14

Document Number: 94168

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

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