Datasheet > VS-20TQ035THN3

VS-20TQ035THN3

更新时间： 2023-12-06 20:06:30

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	170K
描述
High Performance Schottky Rectifier, 20 A

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VS-20TQ035THN3 数据手册

VS-20TQ035THN3, VS-20TQ040THN3, VS-20TQ045THN3

www.vishay.com

Vishay Semiconductors

High Performance Schottky Rectifier, 20 A

FEATURES

Base

cathode

• 150 °C T_Joperation

• Low forward voltage drop

• High frequency operation

• High purity, high temperature epoxy

encapsulation for enhanced mechanical

strength and moisture resistance

Cathode

Anode

• Guard ring for enhanced ruggedness and long term

reliability

TO-220AC 2L

• Meets JESD 201, class 1A whisker test

• AEC-Q101 qualified

LINKS TO ADDITIONAL RESOURCES

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

3D Models

DESCRIPTION

The VS-20TQ... Schottky rectifier series has been optimized

for very low forward voltage drop, with moderate leakage.

The proprietary barrier technology allows for reliable

operation up to 150 °C junction temperature. Typical

applications are in switching power supplies, converters,

freewheeling diodes, and reverse battery protection.

PRIMARY CHARACTERISTICS

I_F(AV)

20 A

V_R

35 V, 40 V, 45 V

0.51 V

V_Fat I_F

_RMtyp.

105 mA at 125 °C

150 °C

MECHANICAL DATA

T_Jmax.

E_AS

27 mJ

Case: TO-220AC 2L

Molding compound meets UL 94-V0 flammability rating

Package

TO-220AC 2L

Single

Circuit configuration

Terminals: matte tin plated leads, solderable per

J-STD-002

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

VALUES

UNITS

I_F(AV)

V_RRM

I_FSM

V_F

Rectangular waveform

Range

35 to 45

1800

t_p= 5 μs sine

20 A_pk, T_J= 125 °C

0.51

T_J

Range

-55 to +150

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL VS-20TQ035THN3 VS-20TQ040THN3 VS-20TQ045THN3

UNITS

Maximum DC reverse voltage

Maximum working peak reverse voltage

V_R

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average forward current

See fig. 5

I_F(AV)

50 % duty cycle at T_C= 116 °C, rectangular waveform

1800

400

Maximum peak one cycle

non-repetitive surge current

See fig. 7

5 µs sine or 3 µs rect. pulse

10 ms sine or 6 ms rect. pulse

T_J= 25 °C, I_AS= 4 A, L = 3.4 mH

Following any rated load

condition and with rated

I_FSM

V_RRMapplied

Non-repetitive avalanche energy

E_AS

I_AR

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

Repetitive avalanche current

Revision: 28-Feb-2023

Document Number: 96546

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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