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VS-20ETS08-M3 PDF预览

VS-20ETS08-M3

更新时间: 2024-11-14 15:57:39
品牌 Logo 应用领域
威世 - VISHAY 局域网高压二极管
页数 文件大小 规格书
8页 230K
描述
DIODE RECTIFIER DIODE, Rectifier Diode

VS-20ETS08-M3 技术参数

生命周期:Active包装说明:R-PSFM-T2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.65
应用:HIGH VOLTAGE外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.1 V
JEDEC-95代码:TO-220ACJESD-30 代码:R-PSFM-T2
JESD-609代码:e3最大非重复峰值正向电流:300 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:20 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT APPLICABLE
最大重复峰值反向电压:800 V最大反向电流:100 µA
表面贴装:NO端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT APPLICABLEBase Number Matches:1

VS-20ETS08-M3 数据手册

 浏览型号VS-20ETS08-M3的Datasheet PDF文件第2页浏览型号VS-20ETS08-M3的Datasheet PDF文件第3页浏览型号VS-20ETS08-M3的Datasheet PDF文件第4页浏览型号VS-20ETS08-M3的Datasheet PDF文件第5页浏览型号VS-20ETS08-M3的Datasheet PDF文件第6页浏览型号VS-20ETS08-M3的Datasheet PDF文件第7页 
VS-20ETS..PbF, VS-20ETS..-M3, VS-20ATS..PbF, VS-20ATS..-M3  
www.vishay.com  
Vishay Semiconductors  
High Voltage, Input Rectifier Diode, 20 A  
FEATURES  
• Very low forward voltage drop  
• 150 °C max. operating junction temperature  
2
• Glass passivated pellet chip junction  
3
3
• Designed and qualified according to  
JEDEC®-JESD 47  
2
1
1
TO-220AC  
TO-220AB  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
Base  
cathode  
Cathode to  
base  
2
2
APPLICATIONS  
• Input rectification  
• Vishay Semiconductors switches and output rectifiers  
which are available in identical package outlines  
1
Cathode  
3
Anode  
1
Anode  
3
Anode  
DESCRIPTION  
VS-20ETS..  
VS-20ATS..  
High voltage rectifiers optimized for very low forward  
voltage drop with moderate leakage.  
PRODUCT SUMMARY  
These devices are intended for use in main rectification  
(single or three phase bridge).  
Package  
TO-220AC, TO-220AB  
IF(AV)  
20 A  
800 V to 1200 V  
1.1 V  
VR  
VF at IF  
IFSM  
300 A  
TJ max.  
Diode variation  
150 °C  
Single die, common anode  
OUTPUT CURRENT IN TYPICAL APPLICATIONS  
APPLICATIONS  
SINGLE-PHASE BRIDGE  
THREE-PHASE BRIDGE  
UNITS  
Capacitive input filter TA = 55 °C, TJ = 125 °C  
common heatsink of 1 °C/W  
16.3  
21  
A
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
20  
UNITS  
Sinusoidal waveform  
A
V
800/1200  
300  
A
VF  
10 A, TJ = 25 °C  
1.0  
V
TJ  
-40 to +150  
°C  
VOLTAGE RATINGS  
VRRM, MAXIMUM  
PEAK REVERSE VOLTAGE  
V
VRSM, MAXIMUM NON-REPETITIVE  
IRRM  
AT 150 °C  
mA  
PART NUMBER  
PEAK REVERSE VOLTAGE  
V
VS-20ETS08PbF, VS-20ETS08-M3  
VS-20ATS08PbF, VS-20ATS08-M3  
800  
900  
1
VS-20ETS12PbF, VS-20ETS12-M3  
VS-20ATS12PbF, VS-20ATS12-M3  
1200  
1300  
Revision: 12-Oct-16  
Document Number: 94341  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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