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VS-20ETF12THM3 PDF预览

VS-20ETF12THM3

更新时间: 2024-11-14 19:58:03
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
8页 223K
描述
Rectifier Diode,

VS-20ETF12THM3 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknownFactory Lead Time:16 weeks
风险等级:1.6二极管类型:RECTIFIER DIODE
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

VS-20ETF12THM3 数据手册

 浏览型号VS-20ETF12THM3的Datasheet PDF文件第2页浏览型号VS-20ETF12THM3的Datasheet PDF文件第3页浏览型号VS-20ETF12THM3的Datasheet PDF文件第4页浏览型号VS-20ETF12THM3的Datasheet PDF文件第5页浏览型号VS-20ETF12THM3的Datasheet PDF文件第6页浏览型号VS-20ETF12THM3的Datasheet PDF文件第7页 
VS-20ETF12THM3  
Vishay Semiconductors  
www.vishay.com  
Fast Soft Recovery Rectifier Diode, 20 A  
FEATURES  
Base  
cathode  
2
2
• Glass passivated pellet chip junction  
• AEC-Q101 qualified  
• Meets JESD 201 class 1A whisker test  
• Flexible solution for reliable AC power  
rectification  
1
1
3
Cathode  
Anode  
3
• High surge, low VF rugged blocking diode  
for DC charging stations  
2L TO-220AC  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
IF(AV)  
20 A  
1200 V  
1.31 V  
320 A  
95 ns  
150 °C  
0.6  
APPLICATIONS  
VR  
• On-board and off-board EV/HEV battery chargers  
• Input rectification  
VF at IF  
IFSM  
trr  
DESCRIPTION  
TJ max.  
Snap factor  
The VS-20ETF12THM3 fast soft recovery rectifier series has  
been optimized for combined short reverse recovery time  
and low forward voltage drop.  
Package  
2L TO-220AC  
Single  
Circuit configuration  
The glass passivation ensures stable reliable operation in  
the most severe temperature and power cycling conditions.  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
VRRM  
IF(AV)  
IFSM  
trr  
CHARACTERISTICS  
VALUES  
1200  
UNITS  
V
Sinusoidal waveform  
20  
A
320  
1 A, 100 A/μs  
20 A, TJ = 25 °C  
Range  
95  
ns  
V
VF  
1.31  
TJ  
-40 to +150  
°C  
VOLTAGE RATINGS  
PART NUMBER  
VRRM, MAXIMUM PEAK  
REVERSE VOLTAGE  
V
VRSM, MAXIMUM NON-REPETITIVE  
IRRM  
AT 150 °C  
mA  
PEAK REVERSE VOLTAGE  
V
VS-20ETF12THM3  
1200  
1300  
6
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
20  
UNITS  
Maximum average forward current  
IF(AV)  
TC = 113 °C, 180° conduction half sine wave  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
t = 0.1 ms to 10 ms, no voltage reapplied  
270  
A
Maximum peak one cycle  
non-repetitive surge current  
IFSM  
320  
365  
Maximum I2t for fusing  
I2t  
A2s  
515  
Maximum I2t for fusing  
I2t  
5150  
A2s  
Revision: 06-Jul-2018  
Document Number: 96535  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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