Datasheet > VS-20ETFSPBF

VS-20ETFSPBF

更新时间： 2024-11-15 00:59:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	244K
描述
Surface Mount Fast Soft Recovery Rectifier Diode, 20 A

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中文翻译

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VS-20ETFSPBF 数据手册

VS-20ETF..SPbF Series

www.vishay.com

Vishay Semiconductors

Surface Mount Fast Soft Recovery Rectifier Diode, 20 A

FEATURES

Base

• Glass passivated pellet chip junction

cathode

Available

• Designed and qualified according to

JEDEC^®-JESD 47

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

Anode

TO-263AB (D²PAK)

APPLICATIONS

• Output rectification and freewheeling in inverters,

choppers and converters

PRODUCT SUMMARY

• Input rectifications where severe restrictions on

conducted EMI should be met

Package

TO-263AB (D²PAK)

I_F(AV)

20 A

800 V, 1000 V, 1200 V

1.31 V

DESCRIPTION

V_R

The VS-20ETF..SPbF soft recovery rectifier series has been

optimized for combined short reverse recovery time and low

forward voltage drop.

V_Fat I_F

I_FSM

355 A

t_rr

95 ns

The glass passivation ensures stable reliable operation in

the most severe temperature and power cycling conditions.

T_Jmax.

Diode variation

Snap factor

150 °C

Single die

0.6



MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FSM

V_F

CHARACTERISTICS

VALUES

UNITS

Sinusoidal waveform

800 to 1200

355

20 A, T_J= 25 °C

1 A, 100 A/μs

Range

1.31

t_rr

°C

T_J

-40 to +150

VOLTAGE RATINGS

V_RRM, MAXIMUM PEAK

REVERSE VOLTAGE

V_RSM, MAXIMUM NON-REPETITIVE

I_RRM

AT 150 °C

PART NUMBER

PEAK REVERSE VOLTAGE

VS-20ETF08SPbF

VS-20ETF10SPbF

VS-20ETF12SPbF

800

1000

1200

900

1100

1300

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average forward current

I_F(AV)

T_C= 97 °C, 180° conduction half sine wave

10 ms sine pulse, rated V_RRMapplied

10 ms sine pulse, no voltage reapplied

10 ms sine pulse, rated V_RRMapplied

10 ms sine pulse, no voltage reapplied

t = 0.1 ms to 10 ms, no voltage reapplied

300

Maximum peak one cycle

non-repetitive surge current

I_FSM

355

450

Maximum I²t for fusing

I²t

A²s

635

Maximum I²t for fusing

I²t

6350

A²s

Revision: 11-Feb-16

Document Number: 94099

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

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与VS-20ETFSPBF相关器件

型号	品牌	获取价格	描述	数据表
VS-20ETS..-M3	VISHAY	获取价格	High Voltage, Input Rectifier Diode, 20 A
VS-20ETS08FP-M3	VISHAY	获取价格	High Voltage, Input Rectifier Diode, 20 A
VS-20ETS08FPPBF	VISHAY	获取价格	DIODE GP 800V 20A TO220ACFP
VS-20ETS08-M3	VISHAY	获取价格	DIODE RECTIFIER DIODE, Rectifier Diode
VS-20ETS08PBF	VISHAY	获取价格	DIODE 20 A, 800 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2,
VS-20ETS08S-M3	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 20A, 800V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VS-20ETS08SPBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 20A, 800V V(RRM), Silicon, HALOGEN FREE AND ROHS COMP
VS-20ETS08STRL-M3	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 20A, 800V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VS-20ETS08STRLPBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 20A, 800V V(RRM), Silicon, HALOGEN FREE AND ROHS COMP
VS-20ETS08STRR-M3	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 20A, 800V V(RRM), Silicon, TO-263AB, D2PAK-3/2

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