Datasheet > VFT1045CBP_1205

VFT1045CBP_1205

更新时间： 2024-11-15 12:21:59

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	83K
描述
Trench MOS Barrier Schottky Rectifier

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

VFT1045CBP_1205 数据手册

New Product

VFT1045CBP

Vishay General Semiconductor

Trench MOS Barrier Schottky Rectifier

for PV Solar Cell Bypass Protection

Ultra Low V_F= 0.34 V at I_F= 2.5 A

FEATURES

TMBS^®

ITO-220AB

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Solder bath temperature 275 °C max. 10 s, per

JESD 22-B106

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

• Halogen-free according to IEC 61249-2-21 definition

VFT1045CBP

PIN 1

PIN 2

TYPICAL APPLICATIONS

For use in solar cell junction box as a bypass diode for

protection, using DC forward current without reverse bias.

PIN 3

MECHANICAL DATA

PRIMARY CHARACTERISTICS

Case: ITO-220AB

Molding compound meets UL 94 V-0 flammability rating

I_F(AV)

2 x 5.0 A

45 V

V_RRM

Base P/N-M3

- halogen-free, RoHS compliant, and

commercial grade

I_FSM

100 A

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

V_Fat I_F= 5.0 A

T_OPmax.

0.41 V

150 °C

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VFT1045CBP

UNIT

Maximum repetitive peak reverse voltage

V_RRM

per device

per diode

(1)

Maximum average forward rectified current (fig. 1)

I_F(AV)

5.0

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

100

Isolation voltage from termal to heatsink, t = 1 min

Operating junction and storage temperature range

V_AC

1500

T_OP, T_STG

- 40 to + 150

°C

Junction temperature in DC forward current

without reverse bias, t ≤ 1 h

(2)

T_J

≤ 200

°C

Notes

(1)

With heatsink

(2)

Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test

Document Number: 89367

Revision: 27-Oct-10

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

12 3 4

中文翻译

下载PDF

与VFT1045CBP_1205相关器件

型号	品牌	获取价格	描述	数据表
VFT1045CBP_15	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier
VFT1045CBP-M3/4W	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
VFT1045CBP-M3-4W	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier
VFT1045C-M3	VISHAY	获取价格	Low forward voltage drop, low power losses
VFT1045C-M3_15	VISHAY	获取价格	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
VFT1060C	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VFT1060C_15	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VFT1060C-E3 VBT1060C-E3	VISHAY	获取价格	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5
VFT1060C-E3/4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VFT1060C-M3/4W	VISHAY	获取价格	DIODE 5 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLAS

与VFT1045CBP_1205相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

6
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

3
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

29
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

12

产品中心

服务支持

精选活动

关于我们

帮助中心

VFT1045CBP_1205

VFT1045CBP_1205 数据手册

与VFT1045CBP_1205相关器件

与VFT1045CBP_1205相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

VFT1045CBP_1205

VFT1045CBP_1205 数据手册

与VFT1045CBP_1205相关器件

与VFT1045CBP_1205相关文章

您还可以找

您在本页遇到什么问题？