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VFT150-50 PDF预览

VFT150-50

更新时间: 2024-11-14 22:16:07
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描述
VHF POWER MOSFET N-Channel Enhancement Mode

VFT150-50 技术参数

生命周期:Active包装说明:FLANGE MOUNT, O-CRFM-F4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.21
配置:SINGLE最小漏源击穿电压:125 V
最大漏极电流 (Abs) (ID):16 A最大漏极电流 (ID):16 A
FET 技术:METAL-OXIDE SEMICONDUCTOR最高频带:VERY HIGH FREQUENCY BAND
JESD-30 代码:O-CRFM-F4元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):300 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:FLAT
端子位置:RADIAL晶体管元件材料:SILICON
Base Number Matches:1

VFT150-50 数据手册

  
VFT150-50  
VHF POWER MOSFET  
N-Channel Enhancement Mode  
DESCRIPTION:  
The VFT150-50 is a N-Channel  
Enhancement Mode RF Power  
PACKAGE STYLE .500 4L FLG  
MOSFET Designed for AM/FM Power  
Amplifier Applications up to 175 MHz.  
.112x45°  
L
A
Ø.125 NOM.  
FULL R  
C
S
D
FEATURES:  
PG = 13.5 dB Typical at 175 MHz  
10:1 Load VSWR Capability  
Omnigold™ Metalization System  
B
S
G
E
D
F
G
H
K
J
I
MAXIMUM RATINGS  
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
DIM  
ID  
16 A  
125 V  
.220 / 5.59  
.230 / 5.84  
A
B
C
D
E
F
G
H
I
.125 / 3.18  
.125 / 3.18  
VDSS  
VGS  
PDISS  
TJ  
.245 / 6.22  
.255 / 6.48  
.720 / 18.28  
.7.30 / 18.54  
± 30 V  
.970 / 24.64  
.495 / 12.57  
.003 / 0.08  
.090 / 2.29  
.150 / 3.81  
.980 / 24.89  
.505 / 12.83  
.007 / 0.18  
.110 / 2.79  
.175 / 4.45  
.280 / 7.11  
1.050 / 26.67  
300 W @ TC = 25 OC  
-65 OC to +200 OC  
-65 OC to +150 OC  
0.6 OC/W  
J
K
L
TSTG  
qJC  
.980 / 24.89  
ORDER CODE: ASI10709  
CHARACTERISTICS TC = 25 OC  
NONE  
SYMBOL  
BVDSS  
IDSS  
TEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
ID = 50 mA  
VDS = 50 V  
VDS = 0 V  
125  
V
VGS = 0 V  
VGS = 20 V  
ID = 100 mA  
ID = 5 A  
5.0  
1.0  
5.0  
mA  
m A  
V
IGSS  
VGS(th)  
gfs  
VDS = 10 V  
VDS = 10 V  
1.0  
3,000  
mS  
290  
130  
28  
Ciss  
Coss  
Crss  
VDS = 50 V  
VGS = 0 V  
f = 1.0 MHz  
f = 175 MHz  
pF  
PG  
h D  
VDD = 50 V  
IDQ = 250 mA  
13  
45  
13.5  
55  
dB  
%
Pout = 150 W  
y
VSWR = 10:1 AT ALL PHASE ANGLES  
NO DEGRADATION IN OUTPUT POWER  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. B  
1/1  
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004  
Specifications are subject to change without notice.  

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