Datasheet > VFT150-50_07

VFT150-50_07

更新时间： 2024-11-15 08:13:07

品牌	Logo	应用领域
ASI		/
页数	文件大小	规格书
3页	63K
描述
VHF POWER MOSFET

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VFT150-50_07 数据手册

VFT150-50

VHF POWER MOSFET

N-Channel Enhancement Mode

DESCRIPTION:

The ASI VFT150-50 is a gold

PACKAGE STYLE .500 4L FLG

metallized N-Channel Enhancement

mode MOSFET intended for use in 50

Vdc large signal output to 200 MHz.

.112x45°

Ø.125 NOM.

FULL R

FEATURES:

• P_G= 13.0 dB Typ. at 175 MHz/150 W

• CS configuration; 50 Vdc operation

• Omnigold™ Metalization System

MAXIMUM RATINGS

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

I_D

16 A

125 V

.220 / 5.59

.230 / 5.84

.125 / 3.18

V_DSS

V_GS

P_DISS

T_J

.245 / 6.22

.255 / 6.48

.720 / 18.28

.7.30 / 18.54

± 30 V

.970 / 24.64

.495 / 12.57

.003 / 0.08

.090 / 2.29

.150 / 3.81

.980 / 24.89

.505 / 12.83

.007 / 0.18

.110 / 2.79

.175 / 4.45

.280 / 7.11

1.050 / 26.67

300 W @ T_C= 25 ^OC

-65 ^OC to +200 ^OC

-65 ^OC to +150 ^OC

0.6 ^OC/W

T_STG

θ_JC

.980 / 24.89

ORDER CODE: ASI10709

CHARACTERISTICS ^T_C= 25 ^O

NONE

SYMBOL

BV_DSS

I_DSS

TEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_D= 50 mA

125

µA

_DS= 50 V

V_GS= 0 V

V_GS= 20 V

I_D= 100 mA

I_D= 5 A

5.0

1.0

5.0

I_GSS

_DS= 0 V

V_GS

_DS= 10 V

1.0

3.0

g_fs

mho

290

130

C_iss

C_oss

C_rss

_DS= 50 V

V_GS= 0 V

f = 1.0 MHz

f = 175 MHz

P_G

η_D

V_DD= 50 V

I_DQ= 250 mA

13.0

P_out= 150 W (PEP) P_IN= 6.0 W

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. C

1/3

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

12 3

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