Datasheet > VFT1080S_15

VFT1080S_15

更新时间： 2024-11-16 01:25:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	75K
描述
Trench MOS Barrier Schottky Rectifier

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

VFT1080S_15 数据手册

VFT1080S

Vishay General Semiconductor

www.vishay.com

Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.52 V at I_F= 5 A

FEATURES

TMBS^®

ITO-220AB

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Solder bath temperature 275 °C max. 10 s,

per JESD 22-B106

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

VFT1080S

TYPICAL APPLICATIONS

PIN 1

PIN 3

PIN 2

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection.

MECHANICAL DATA

Case: ITO-220AB

Molding compound meets UL 94 V-0 flammability rating

PRIMARY CHARACTERISTICS

I_F(AV)

10 A

80 V

V_RRM

Base P/N-M3

- halogen-free, RoHS-compliant, and

commercial grade

I_FSM

100 A

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

V_Fat I_F= 10 A

T_Jmax.

0.60 V

150 °C

ITO-220AB

Single die

Package

Diode variation

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VFT1080S

UNIT

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (fig. 1)

V_RRM

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

100

Voltage rate of change (rated V_R)

dV/dt

V_AC

10 000

1500

V/μs

Isolation voltage from termal to heatsink t = 1 min

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 150

°C

Revision: 28-Oct-13

Document Number: 89259

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4

中文翻译

下载PDF

与VFT1080S_15相关器件

型号	品牌	获取价格	描述	数据表
VFT1080S-E3/4W	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier
VFT1080S-M3/4W	VISHAY	获取价格	DIODE 10 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLA
VFT1080S-M3-4W	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier
VFT150-28	ASI	获取价格	VHF POWER MOSFET Channel Enhancement Mode
VFT150-28_07	ASI	获取价格	VHF POWER MOSFET
VFT150-50	ASI	获取价格	VHF POWER MOSFET N-Channel Enhancement Mode
VFT150-50_07	ASI	获取价格	VHF POWER MOSFET
VFT150PS05	XPPOWER	获取价格	100 W Convection Rating, 150 W Forcedcooled Rating
VFT150PS12	XPPOWER	获取价格	100 W Convection Rating, 150 W Forcedcooled Rating
VFT150PS15	XPPOWER	获取价格	100 W Convection Rating, 150 W Forcedcooled Rating