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VFT15-12 PDF预览

VFT15-12

更新时间: 2024-02-05 22:15:54
品牌 Logo 应用领域
ASI 晶体射频场效应晶体管放大器局域网
页数 文件大小 规格书
1页 23K
描述
VHF POWER MOSFET N-Channel Enhancement Mode

VFT15-12 技术参数

生命周期:Active包装说明:FLANGE MOUNT, O-CRFM-F4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.7Is Samacsys:N
配置:SINGLE最小漏源击穿电压:40 V
最大漏极电流 (Abs) (ID):5 A最大漏极电流 (ID):5 A
FET 技术:METAL-OXIDE SEMICONDUCTOR最高频带:VERY HIGH FREQUENCY BAND
JESD-30 代码:O-CRFM-F4元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):95 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:FLAT
端子位置:RADIAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

VFT15-12 数据手册

  
VFT15-12  
VHF POWER MOSFET  
N-Channel Enhancement Mode  
DESCRIPTION:  
The VFT15-12 is Designed for  
General Purpose Class B Power  
Amplifier Applications up to 175 MHz.  
PACKAGE STYLE .380 4L FLG  
.112 x 45°  
FEATURES:  
B
A
Ø.125 NOM.  
FULL R  
· PG = 12 dB Typ. at 15 W /175MHz  
· 20:1 Load VSWR Capability  
· Omnigold™ Metalization System  
S
D
S
J
.125  
G
C
D
E
F
MAXIMUM RATINGS  
I
H
G
ID  
5.0 A  
40 V  
V
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
(BR)DSS  
DIM  
.220 / 5.59  
.785 / 19.94  
.720 / 18.29  
.970 / 24.64  
.230 / 5.84  
A
B
C
D
E
F
G
H
I
VDGR  
40 V  
.730 / 18.54  
.980 / 24.89  
.385 / 9.78  
.006 / 0.15  
.105 / 2.67  
.180 / 4.57  
.280 / 7.11  
.255 / 6.48  
VGS  
PDISS  
TJ  
± 20 V  
95 W @ TC = 25 OC  
-65 OC to +200 OC  
-65 OC to +150 OC  
1.8 OC/W  
.004 / 0.10  
.085 / 2.16  
.160 / 4.06  
TSTG  
qJC  
.240 / 6.10  
J
ORDER CODE: ASI10845  
CHARACTERISTICS TC = 25 OC  
SYMBOL  
V(BR)DSS  
IDSS  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
VGS = 0 V  
VDS = 15 V  
VDS = 0 V  
VDS = 10 V  
VDS = 10 V  
IDS = 5 mA  
VGS = 0 V  
VGS = 20 V  
ID = 25 mA  
ID = 1.0 A  
40  
---  
---  
---  
---  
---  
---  
2.0  
1.0  
6.0  
---  
V
---  
mA  
m A  
V
IGSS  
---  
VGS  
1.0  
500  
GFS  
mS  
Ciss  
Coss  
Crss  
45  
45  
10  
VGS = 15 V  
VDS = 0 V  
F = 1.0 MHz  
POUT = 15 W  
pF  
PG  
VDD = 12.5 V  
F = 175 MHz  
IDQ = 25 mA  
10  
60  
12  
65  
dB  
h D  
%
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
1/1  
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004  
Specifications are subject to change without notice.  

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